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公开(公告)号：US20240420998A1
公开(公告)日：2024-12-19
申请号：US18209037
申请日：2023-06-13
Applicant: Applied Material, Inc.
Inventor： Joni Oskari Raisanen , Kunal Bhatnagar
IPC: H01L21/768 , H01L21/8238 , H01L27/092
Abstract: Methods of forming transistors, e.g., FinFETs, are described. A conformal liner layer is formed in a trench. A metal nitride material is introduced in regular or semi-regular intervals during a metal gap fill of a trench structure to prevent the formation of voids (air gaps) within the structure. The metal nitride material and the metal gap fill material may be deposited by atomic layer deposition methods.
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