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    High temperature tungsten metallization process
    4.
    发明授权
    High temperature tungsten metallization process 有权
    高温钨金属化工艺

    公开(公告)号：US08835311B2

    公开(公告)日：2014-09-16

    申请号：US14145434

    申请日：2013-12-31

    Applicant: Applied Material, Inc.

    Inventor： Joshua Collins ,  Murali K. Narasimhan ,  Jingjing Liu ,  Sang-Hyeob Lee ,  Kai Wu ,  Avgerinos V. Gelatos

    IPC: H01L21/44 ,  H01L21/768

    CPC classification number: H01L21/76876 ,  H01L21/743 ,  H01L21/76814 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76877 ,  H01L23/53266 ,  H01L27/10885 ,  H01L27/10891 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. In one embodiment, the method for forming a tungsten-containing material on a substrate includes forming an adhesion layer containing titanium nitride on a dielectric layer disposed on a substrate, forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer contains tungsten nitride and carbon. The method further includes forming a tungsten barrier layer (e.g., tungsten or tungsten-carbon material) from the tungsten nitride intermediate layer by thermal decomposition during a thermal annealing process (e.g., temperature from about 700° C. to less than 1,000° C.). Subsequently, the method includes optionally forming a nucleation layer on the tungsten barrier layer, optionally exposing the tungsten barrier layer and/or the nucleation layer to a reducing agent during soak processes, and forming a tungsten bulk layer on or over the tungsten barrier layer and/or the nucleation layer.

    Abstract translation: 本发明的实施方案提供了一种用于沉积含钨材料的改进方法。 在一个实施例中，在基板上形成含钨材料的方法包括在设置在基板上的电介质层上形成含有氮化钛的粘合层，在粘合层上形成氮化钨中间层，其中氮化钨中间层 含有氮化钨和碳。 该方法还包括在热退火过程中（例如，从约700℃至小于1000℃的温度）通过热分解从氮化钨中间层形成钨阻挡层（例如，钨或钨 - 碳材料） ）。 随后，该方法包括任选地在钨阻挡层上形成成核层，任选地在浸泡过程期间将钨阻挡层和/或成核层暴露于还原剂，以及在钨阻挡层上或之上形成钨体层，以及 /或成核层。

    TARGET FOR PVD SPUTTERING SYSTEM
    5.
    发明申请
    TARGET FOR PVD SPUTTERING SYSTEM 有权
    PVD溅射系统的目标

    公开(公告)号：US20140251217A1

    公开(公告)日：2014-09-11

    申请号：US13785866

    申请日：2013-03-05

    Applicant: APPLIED MATERIAL, INC.

    Inventor： THANH X. NGUYEN ,  YONG CAO ,  MUHAMMAD RASHEED ,  XIANMIN TANG

    IPC: H01J37/34 ,  C23C14/34

    CPC classification number: H01J37/3423 ,  C23C14/3407 ,  H01J37/32403 ,  H01J37/3414 ,  H01J37/3417 ,  H01J37/3435 ,  Y10T428/21

    Abstract: Embodiments of apparatus for physical vapor deposition are provided. In some embodiments, a target assembly for use in a substrate processing system to process a substrate includes a plate having a first side and an opposing second side, wherein the second side comprises a target supporting surface extending from the second side in a direction normal to the second side, wherein the target supporting surface has a first diameter and is bounded by a first edge; and a target having a first side bonded to the target supporting surface, wherein a diameter of the target is greater than the first diameter of the target supporting surface.

    Abstract translation: 提供了用于物理气相沉积的设备的实施例。 在一些实施例中，用于处理衬底的衬底处理系统中的目标组件包括具有第一侧和相对的第二侧的板，其中第二侧包括从第二侧沿垂直于 所述第二侧，其中所述目标支撑表面具有第一直径并且由第一边缘限定; 以及具有接合到所述目标支撑表面的第一侧的靶，其中所述靶的直径大于所述靶支撑表面的第一直径。

    SINGLE WAFER LOAD LOCK WITH INTERNAL WAFER TRANSPORT
    6.
    发明申请
    SINGLE WAFER LOAD LOCK WITH INTERNAL WAFER TRANSPORT 失效
    单波浪载荷与内部运输

    公开(公告)号：US20020031420A1

    公开(公告)日：2002-03-14

    申请号：US09161970

    申请日：1998-09-28

    Applicant: Applied Material Inc.

    Inventor： TONY KROEKER

    IPC: B65G049/07

    CPC classification number: H01L21/67126 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/67751 ,  Y10S414/139

    Abstract: The present invention provides a load lock having a vertically movable lid, an internal robot, and a wafer lifting mechanism and further provides a method of transferring wafers through a load lock directly to a process chamber. An atmospheric transfer robot shuttles wafers to and from the lifting mechanism while the lid is raised and the lifting mechanism then transfers wafers to and from the internal robot. The load lock is directly attached to a process chamber and communicates therewith via a slit valve which is selectively opened and closed. The internal robot is extended and retracted through the slit valve aperture in order to transfer a wafer to and from the process chamber. In one embodiment the lifting mechanism is comprised of vertically movable lift pins disposed through the bottom of the load lock. In another embodiment the lifting mechanism includes two pairs of lift forks disposed through the cover of the load lock. Each pair of forks is capable of independent rotational and vertical movement and each pair is adapted to handle a single wafer.

    Abstract translation: 本发明提供一种具有可垂直移动的盖子，内部机器人和晶片提升机构的装载锁定装置，并且还提供了一种通过装载锁定将晶片直接传送到处理室的方法。 大气传送机器人在盖子升起时将晶片运送到提升机构，并且提升机构然后将晶片传送到内部机器人和从内部机器人传送晶片。 负载锁直接连接到处理室，并通过选择性地打开和关闭的狭缝阀与其连通。 内部机器人通过狭缝阀孔延伸并缩回，以将晶片传送到处理室和从处理室传送晶片。 在一个实施例中，提升机构包括穿过负载锁的底部设置的可升降的升降销。 在另一个实施例中，提升机构包括穿过装载锁的盖布置的两对提升叉。 每对叉都能够独立的旋转和垂直运动，并且每对叉都适于处理单个晶片。

    ADHESIVE THREAD DRAWING PROCESSES
    9.
    发明申请
    ADHESIVE THREAD DRAWING PROCESSES 审中-公开

    公开(公告)号：US20200173056A1

    公开(公告)日：2020-06-04

    申请号：US16564134

    申请日：2019-09-09

    Applicant: WINN APPLIED MATERIAL, INC.

    Inventor： CHUNG-MING YU ,  SHI-WEI WANG ,  SHIH-HAO WANG

    IPC: D01D5/088 ,  D01D5/12 ,  D01D7/00 ,  D01F6/70

    Abstract: The adhesive thread drawing processes include the steps of feeding, mixing and stirring, first drying, hot melt extrusion, first cooling, stretch extension, second cooling, winding-strands-into-roll, and second drying. The threads made by the processes are woven into fabric which has a certain level of stickiness so as to be attached onto objects without using glue and adhesive, and the fabric is flat and neat when it is attached to an object.

    Reduction of Air Gaps in FinFET Structures
    10.
    发明申请
    Reduction of Air Gaps in FinFET Structures 有权

    公开(公告)号：US20240420998A1

    公开(公告)日：2024-12-19

    申请号：US18209037

    申请日：2023-06-13

    Applicant: Applied Material, Inc.

    Inventor： Joni Oskari Raisanen ,  Kunal Bhatnagar

    IPC: H01L21/768 ,  H01L21/8238 ,  H01L27/092

    Abstract: Methods of forming transistors, e.g., FinFETs, are described. A conformal liner layer is formed in a trench. A metal nitride material is introduced in regular or semi-regular intervals during a metal gap fill of a trench structure to prevent the formation of voids (air gaps) within the structure. The metal nitride material and the metal gap fill material may be deposited by atomic layer deposition methods.

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