公开(公告)号：US20230386829A1

公开(公告)日：2023-11-30

申请号：US17827652

申请日：2022-05-27

Applicant: Applied Material, Inc.

Inventor： Soham Asrani ,  Bhargav S. Citla ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/02238 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/02164 ,  H01L21/0243 ,  H01L21/02381

Abstract: Embodiments of the disclosure relate to methods for forming silicon based gapfill within substrate features. A flowable silicon film is formed within the feature with a greater thickness on the bottom and top surfaces than the sidewall surface. An etch plasma removes the silicon film from the sidewall surface. A conversion plasma is used to convert the silicon film to a silicon based gapfill (e.g., silicon oxide). In some embodiments, the silicon film is preferentially converted on the top and bottom surface before being etched from the sidewall surface.