公开(公告)号：US20230335391A1

公开(公告)日：2023-10-19

申请号：US17722648

申请日：2022-04-18

Applicant: Applied Materials, Inc.

Inventor： Xinke Wang ,  Bhaskar Jyoti Bhuyan ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallik ,  Jiecong Tang ,  John Sudijono ,  Mark Saly

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/04 ,  C23C16/26

CPC classification number: H01L21/02118 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02205 ,  C23C16/56 ,  C23C16/04 ,  C23C16/26

Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.

公开(公告)号：US20210143058A1

公开(公告)日：2021-05-13

申请号：US17089221

申请日：2020-11-04

Applicant: Applied Materials, Inc.

Inventor： Praket Prakash Jha ,  Shuchi Sunil Ojha ,  Jingmei Liang ,  Abhijit Basu Mallik ,  Shankar Venkataraman

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/311 ,  H01L21/3213

Abstract: Exemplary methods of forming a semiconductor structure may include forming a first silicon oxide layer overlying a semiconductor substrate. The methods may include forming a first silicon layer overlying the first silicon oxide layer. The methods may include forming a silicon nitride layer overlying the first silicon layer. The methods may include forming a second silicon layer overlying the silicon nitride layer. The methods may include forming a second silicon oxide layer overlying the second silicon layer. The methods may include removing the silicon nitride layer. The methods may include removing the first silicon layer and the second silicon layer. The methods may include forming a metal layer between and contacting each of the first silicon oxide layer and the second silicon oxide layer.