公开(公告)号：US20150200125A1

公开(公告)日：2015-07-16

申请号：US14153807

申请日：2014-01-13

Applicant: Applied Materials, Inc.

Inventor： Amit CHATTERJEE

IPC: H01L21/764 ,  H01L21/768

CPC classification number: H01L21/764 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/31138 ,  H01L21/7682 ,  H01L21/76876

Abstract: Embodiments of the present invention generally relate to methods for forming a flowable carbon-containing film on a substrate. In one embodiment, an oxygen-containing gas is flowed into a remote plasma region to produce oxygen-containing plasma effluents, and a carbon-containing gas is combined with the oxygen-containing plasma effluents in a substrate processing region which contains the substrate. A carbon-containing film is formed in trenches which are formed on the substrate and a low K dielectric material is deposited on the carbon-containing film in the trenches. The carbon-containing film is decomposed by an UV treatment and airgaps are formed in the trenches under the low K dielectric material.

Abstract translation: 本发明的实施方案一般涉及在基材上形成可流动的含碳膜的方法。 在一个实施方案中，含氧气体流入远程等离子体区域以产生含氧等离子体流出物，并且含碳气体与含有基底的基底处理区域中的含氧等离子体流出物组合。 在基板上形成的沟槽中形成含碳膜，在沟槽中的含碳膜上沉积低K电介质材料。 通过UV处理分解含碳膜，并在低K电介质材料下的沟槽中形成气隙。

公开(公告)号：US20150167160A1

公开(公告)日：2015-06-18

申请号：US14270216

申请日：2014-05-05

Applicant: Applied Materials, Inc.

Inventor： Yihong CHEN ,  Shaunak MUKHERJEE ,  Amit CHATTERJEE ,  Pramit MANNA ,  Abhijit Basu MALLICK ,  Ningli LIU ,  Jianhua ZHOU ,  Juan Carlos ROCHA-ALVAREZ ,  Mukund SRINIVASAN

IPC: C23C16/452

CPC classification number: C23C16/452 ,  H01J37/32357 ,  H01J37/32422

Abstract: One or more precursor gases, such as one or more silicon-containing gases, which may be one or more organosilicon and/or tetraalkyl orthosilicate gases, are introduced into a processing chamber and exposed to radicals. Dielectric films deposited using the techniques disclosed herein may contain silicon. The deposited films may exhibit few defects, low shrinkage, and high etch selectivity, mechanical stability, and thermal stability. The deposition conditions can be very mild, so damage to the substrate and the as-deposited films from UV radiation and ion bombardment is minimal or nonexistent.

Abstract translation: 一种或多种前体气体，例如一种或多种含硅气体，其可以是一种或多种有机硅和/或原硅酸四烷基酯，被引入处理室并暴露于自由基。 使用本文公开的技术沉积的介质膜可以含有硅。 沉积膜可能表现出很少的缺陷，低收缩率和高蚀刻选择性，机械稳定性和热稳定性。 沉积条件可能非常温和，因此对紫外辐射和离子轰击对基底和沉积膜的损伤最小或不存在。

公开(公告)号：US20150126045A1

公开(公告)日：2015-05-07

申请号：US14520721

申请日：2014-10-22

Applicant: Applied Materials, Inc.

Inventor： Amit CHATTERJEE ,  Abhijit Basu MALLICK ,  Nitin K. INGLE

IPC: H01L21/02

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/4411 ,  C23C16/452 ,  C23C16/45582 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02274

Abstract: Embodiments of the present invention generally provide methods for forming a silicon nitride layer on a substrate. In one embodiment, a method of forming a silicon nitride layer using remote plasma chemical vapor deposition (CVD) at a temperature that is less than 300 degrees Celsius is disclosed. The precursors for the remote plasma CVD process include tris(dimethylamino)silane (TRIS), dichlorosilane (DCS), trisilylamine (TSA), bis-t-butylaminosilane (BTBAS), hexachlorodisilane (HCDS) or hexamethylcyclotrisilazane (HMCTZ).

Abstract translation: 本发明的实施方案通常提供在衬底上形成氮化硅层的方法。 在一个实施例中，公开了在小于300摄氏度的温度下使用远程等离子体化学气相沉积（CVD）形成氮化硅层的方法。 用于远程等离子体CVD工艺的前体包括三（二甲基氨基）硅烷（TRIS），二氯硅烷（DCS），三甲基胺（TSA），双 - 叔丁基氨基硅烷（BTBAS），六氯二硅烷（HCDS）或六甲基环三硅氮烷（HMCTZ）。