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    CERAMIC HEATER WITH ENHANCED RF POWER DELIVERY
    1.
    发明申请
    CERAMIC HEATER WITH ENHANCED RF POWER DELIVERY 审中-公开

    公开(公告)号：US20170278682A1

    公开(公告)日：2017-09-28

    申请号：US15463020

    申请日：2017-03-20

    Applicant: Applied Materials, Inc.

    Inventor： Xing LIN ,  Jianhua ZHOU ,  Ningli LIU ,  Juan Carlos ROCHA-ALVAREZ

    IPC: H01J37/32 ,  C23C16/46 ,  C30B23/06 ,  C30B25/12 ,  C30B25/10 ,  C23C14/50 ,  C23C16/458

    Abstract: Embodiments of the present disclosure generally relate to a substrate support assembly in a semiconductor processing chamber. The semiconductor processing chamber may be a PECVD chamber including a substrate support assembly having a substrate support and a stem coupled to the substrate support. An RF electrode is embedded in the substrate support and a rod is coupled to the RF electrode. The rod is made of titanium (Ti) or of nickel (Ni) coated with gold (Au), silver (Ag), aluminum (Al), or copper (Cu). The rod made of Ti or of Ni coated with Au, Ag, Al or Cu has a reduced electrical resistivity and increased skin depth, which minimizes heat generation as RF current travels through the rod.

    APPARATUS FOR RADICAL-BASED DEPOSITION OF DIELECTRIC FILMS
    3.
    发明申请
    APPARATUS FOR RADICAL-BASED DEPOSITION OF DIELECTRIC FILMS 有权
    用于基于放电膜的放射性沉积的装置

    公开(公告)号：US20150376788A1

    公开(公告)日：2015-12-31

    申请号：US14468665

    申请日：2014-08-26

    Applicant: Applied Materials, Inc.

    Inventor： Jianhua ZHOU ,  Juan Carlos ROCHA-ALVAREZ ,  Yihong CHEN ,  Abhijit Basu MALLICK ,  Oscar LOPEZ ,  Ningli LIU

    IPC: C23C16/455 ,  C23C16/40 ,  C23C16/46 ,  C23C16/458 ,  C23C16/505

    CPC classification number: C23C16/45565 ,  C23C16/45574 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/5096 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449

    Abstract: Embodiments disclosed herein generally include an apparatus for radical-based deposition of dielectric films. The apparatus includes a processing chamber, a radical source coupled to the processing chamber, a substrate support disposed in the processing chamber, and a dual-channel showerhead disposed between the radical source and the substrate support. The dual-channel showerhead includes a plurality of tubes and an internal volume surrounding the plurality of tubes. The plurality of tubes and the internal volume are surrounded by one or more annular channels embedded in the dual-channel showerhead. The dual-channel showerhead further includes a first inlet connected to the one or more channels and a second inlet connected to the internal volume. The processing chamber may be a PECVD chamber, and the apparatus is capable of performing a cyclic process (alternating radical based CVD and PECVD).

    Abstract translation: 本文公开的实施例通常包括用于基于基团的沉积电介质膜的装置。 该设备包括处理室，耦合到处理室的自由基源，设置在处理室中的基板支撑件和设置在自由基源和基板支撑件之间的双通道喷头。 双通道淋浴头包括多个管和围绕多个管的内部容积。 多个管和内部体积被嵌入在双通道喷头中的一个或多个环形通道包围。 双通道喷头还包括连接到一个或多个通道的第一入口和连接到内部容积的第二入口。 处理室可以是PECVD室，并且该装置能够执行循环过程（基于交替自由基的CVD和PECVD）。

    ENABLING RADICAL-BASED DEPOSITION OF DIELECTRIC FILMS
    5.
    发明申请
    ENABLING RADICAL-BASED DEPOSITION OF DIELECTRIC FILMS 审中-公开
    使用基于放电的电介质膜的沉积

    公开(公告)号：US20150167160A1

    公开(公告)日：2015-06-18

    申请号：US14270216

    申请日：2014-05-05

    Applicant: Applied Materials, Inc.

    Inventor： Yihong CHEN ,  Shaunak MUKHERJEE ,  Amit CHATTERJEE ,  Pramit MANNA ,  Abhijit Basu MALLICK ,  Ningli LIU ,  Jianhua ZHOU ,  Juan Carlos ROCHA-ALVAREZ ,  Mukund SRINIVASAN

    IPC: C23C16/452

    CPC classification number: C23C16/452 ,  H01J37/32357 ,  H01J37/32422

    Abstract: One or more precursor gases, such as one or more silicon-containing gases, which may be one or more organosilicon and/or tetraalkyl orthosilicate gases, are introduced into a processing chamber and exposed to radicals. Dielectric films deposited using the techniques disclosed herein may contain silicon. The deposited films may exhibit few defects, low shrinkage, and high etch selectivity, mechanical stability, and thermal stability. The deposition conditions can be very mild, so damage to the substrate and the as-deposited films from UV radiation and ion bombardment is minimal or nonexistent.

    Abstract translation: 一种或多种前体气体，例如一种或多种含硅气体，其可以是一种或多种有机硅和/或原硅酸四烷基酯，被引入处理室并暴露于自由基。 使用本文公开的技术沉积的介质膜可以含有硅。 沉积膜可能表现出很少的缺陷，低收缩率和高蚀刻选择性，机械稳定性和热稳定性。 沉积条件可能非常温和，因此对紫外辐射和离子轰击对基底和沉积膜的损伤最小或不存在。

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