公开(公告)号：US20170114459A1

公开(公告)日：2017-04-27

申请号：US15297270

申请日：2016-10-19

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Keiichi Tanaka ,  Eswaranand Venkatasubramanian ,  Mandyam Sriram ,  Bhaskar Jyoti Bhuyan ,  Pramit Manna ,  David Thompson ,  Andrew Short

IPC: C23C16/455 ,  C23C16/40 ,  H01L21/762 ,  C23C16/02

CPC classification number: C23C16/45527 ,  C23C16/02 ,  C23C16/04 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45534 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/76224

Abstract: Methods for depositing film comprising exposing a substrate surface to an organic-based poisoning agent to preferentially inhibit film growth at the top of a feature relative to the bottom of the feature and depositing a film. The substrate can be exposed to the poisoning agent any number of times to promote bottom-up growth of the film in the feature.

公开(公告)号：US11515144B2

公开(公告)日：2022-11-29

申请号：US15374438

申请日：2016-12-09

Applicant: Applied Materials, Inc.

Inventor： Keiichi Tanaka ,  Andrew Short ,  Mandyam Sriram ,  Srinivas Gandikota

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/04 ,  C23C16/455 ,  C23C16/50 ,  H01L21/762

Abstract: Methods for filling the gap of a semiconductor feature comprising exposure of a substrate surface to a precursor and reactant and an anneal environment to decrease the wet etch rate ratio of the deposited film and fill the gap.

公开(公告)号：US11028477B2

公开(公告)日：2021-06-08

申请号：US15297270

申请日：2016-10-19

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Keiichi Tanaka ,  Eswaranand Venkatasubramanian ,  Mandyam Sriram ,  Bhaskar Jyoti Bhuyan ,  Pramit Manna ,  David Thompson ,  Andrew Short

IPC: C23C16/04 ,  C23C16/455 ,  C23C16/34 ,  H01L21/02 ,  C23C16/02 ,  C23C16/40 ,  H01L21/762

Abstract: Methods for depositing film comprising exposing a substrate surface to an organic-based poisoning agent to preferentially inhibit film growth at the top of a feature relative to the bottom of the feature and depositing a film. The substrate can be exposed to the poisoning agent any number of times to promote bottom-up growth of the film in the feature.

公开(公告)号：US20170170009A1

公开(公告)日：2017-06-15

申请号：US15374438

申请日：2016-12-09

Applicant: Applied Materials, Inc.

Inventor： Keiichi Tanaka ,  Andrew Short ,  Mandyam Sriram ,  Srinivas Gandikota

IPC: H01L21/02 ,  C23C16/50 ,  H01L21/762 ,  C23C16/455

CPC classification number: H01L21/02164 ,  C23C16/045 ,  C23C16/45527 ,  C23C16/50 ,  C23C16/56 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/76224

Abstract: Methods for filling the gap of a semiconductor feature comprising exposure of a substrate surface to a precursor and reactant and an anneal environment to decrease the wet etch rate ratio of the deposited film and fill the gap.