公开(公告)号：US11612978B2

公开(公告)日：2023-03-28

申请号：US16897184

申请日：2020-06-09

Applicant: Applied Materials, Inc.

Inventor： Uma Sridhar ,  Sivapackia Ganapathiappan ,  Ashwin Murugappan Chockalingam ,  Mayu Felicia Yamamura ,  Daniel Redfield ,  Rajeev Bajaj ,  Yingdong Luo ,  Nag B. Patibandla

IPC: B24B37/24 ,  B33Y10/00 ,  C09D11/101 ,  C09D11/102 ,  B33Y70/00 ,  B29C64/112 ,  B33Y80/00 ,  H01L21/306 ,  B29L31/00 ,  B29K63/00 ,  B29K75/00

Abstract: Interpenetrating polymer networks (IPNs) for a forming polishing pad for a semiconductor fabrication operation are disclosed. Techniques for forming the polishing pads are provided. In an exemplary embodiment, a polishing pad includes an interpenetrating polymer network formed from a free-radically polymerized material and a cationically polymerized material.

公开(公告)号：US20230256560A1

公开(公告)日：2023-08-17

申请号：US18305264

申请日：2023-04-21

Applicant: Applied Materials, Inc.

Inventor： Uma Sridhar ,  Sivapackia Ganapathiappan ,  Ashwin Murugappan Chockalingam ,  Rajeev Bajaj ,  Daniel Redfield ,  Mayu Felicia Yamamura ,  Yingdong Luo ,  Nag B. Patibandla

IPC: B24B37/24 ,  C09D11/102 ,  C09D11/101 ,  B33Y80/00 ,  B29C64/112 ,  B33Y10/00 ,  B33Y70/00

CPC classification number: B24B37/24 ,  C09D11/102 ,  C09D11/101 ,  B33Y80/00 ,  B29C64/112 ,  B33Y10/00 ,  B33Y70/00 ,  H01L21/30625

Abstract: A method of forming a polishing pad that has a polishing region and a window region, wherein both regions are made of an interpenetrating polymer network formed from a free-radically polymerized material and a cationically polymerized material.

公开(公告)号：US11638979B2

公开(公告)日：2023-05-02

申请号：US16897195

申请日：2020-06-09

Applicant: Applied Materials, Inc

Inventor： Uma Sridhar ,  Sivapackia Ganapathiappan ,  Ashwin Murugappan Chockalingam ,  Rajeev Bajaj ,  Daniel Redfield ,  Mayu Felicia Yamamura ,  Yingdong Luo ,  Nag B. Patibandla

IPC: B24B37/24 ,  C09D11/102 ,  C09D11/101 ,  B33Y80/00 ,  B29C64/112 ,  B33Y10/00 ,  B33Y70/00 ,  H01L21/306 ,  B29K63/00 ,  B29K75/00 ,  B29L31/00

Abstract: A polishing pad for a semiconductor fabrication operation includes a polishing region and a window region, wherein both regions are made of an interpenetrating polymer network formed from a free-radically polymerized material and a cationically polymerized material.

公开(公告)号：US20210379725A1

公开(公告)日：2021-12-09

申请号：US16897184

申请日：2020-06-09

Applicant: Applied Materials, Inc.

Inventor： Uma Sridhar ,  Sivapackia Ganapathiappan ,  Ashwin Murugappan Chockalingam ,  Mayu Felicia Yamamura ,  Daniel Redfield ,  Rajeev Bajaj ,  Yingdong Luo ,  Nag B. Patibandla

IPC: B24B37/24 ,  C09D11/102 ,  C09D11/101 ,  B33Y80/00 ,  B29C64/112 ,  B33Y10/00 ,  B33Y70/00

Abstract: Interpenetrating polymer networks (IPNs) for a forming polishing pad for a semiconductor fabrication operation are disclosed. Techniques for forming the polishing pads are provided. In an exemplary embodiment, a polishing pad includes an interpenetrating polymer network formed from a free-radically polymerized material and a cationically polymerized material.

公开(公告)号：US20210054222A1

公开(公告)日：2021-02-25

申请号：US16996744

申请日：2020-08-18

Applicant: Applied Materials, Inc.

Inventor： Yingdong Luo ,  Sivapackia Ganapathiappan ,  Ashwin Murugappan Chockalingam ,  Daihua Zhang ,  Uma Sridhar ,  Daniel Redfield ,  Rajeev Bajaj ,  Nag B. Patibandla ,  Hou T. Ng ,  Sudhakar Madhusoodhanan

IPC: C09D11/107 ,  C09K3/14 ,  B24B37/24 ,  B33Y70/10 ,  B33Y80/00 ,  B33Y40/10 ,  B29C64/112 ,  B33Y10/00

Abstract: A formulation, system, and method for additive manufacturing of a polishing pad. The formulation includes monomer, dispersant, and nanoparticles. A method of preparing the formulation includes adding a dispersant that is a polyester derivative to monomer, adding metal-oxide nanoparticles to the monomer, and subjecting the monomer having the nanoparticles and dispersant to sonication to disperse the nanoparticles in the monomer.

公开(公告)号：US10589399B2

公开(公告)日：2020-03-17

申请号：US15461944

申请日：2017-03-17

Applicant: Applied Materials, Inc.

Inventor： Jeonghoon Oh ,  Edwin C. Suarez ,  Jason Garcheung Fung ,  Eric Lau ,  King Yi Heung ,  Ashwin Murugappan Chockalingam ,  Daniel Redfield ,  Charles C. Garretson ,  Thomas H. Osterheld

IPC: B24B37/26 ,  B24B37/10

Abstract: A chemical mechanical polishing system includes a substrate support configured to hold a substrate, a polishing pad assembly include a membrane and a polishing pad portion having a polishing surface, a polishing pad carrier, and a drive system configured to cause relative motion between the substrate support and the polishing pad carrier. The polishing pad portion is joined to the membrane on a side opposite the polishing surface. The polishing surface has a width parallel to the polishing surface at least four times smaller than a diameter of the substrate. An outer surface of the polishing pad portion includes at least one recess and at least one plateau having a top surface that provides the polishing surface. The polishing surface has a plurality of edges defined by intersections between side walls of the at least one recess and a top surface of the at least one plateau.

公开(公告)号：US11965103B2

公开(公告)日：2024-04-23

申请号：US16996744

申请日：2020-08-18

Applicant: Applied Materials, Inc.

Inventor： Yingdong Luo ,  Sivapackia Ganapathiappan ,  Ashwin Murugappan Chockalingam ,  Daihua Zhang ,  Uma Sridhar ,  Daniel Redfield ,  Rajeev Bajaj ,  Nag B. Patibandla ,  Hou T. Ng ,  Sudhakar Madhusoodhanan

IPC: C09D11/107 ,  B24B37/24 ,  B29C64/112 ,  B29K33/00 ,  B29K509/02 ,  B29L31/00 ,  B33Y10/00 ,  B33Y40/10 ,  B33Y70/10 ,  B33Y80/00 ,  C09K3/14

CPC classification number: C09D11/107 ,  B24B37/245 ,  B29C64/112 ,  B33Y10/00 ,  B33Y40/10 ,  B33Y70/10 ,  B33Y80/00 ,  C09K3/1409 ,  B29K2033/08 ,  B29K2509/02 ,  B29L2031/736

Abstract: A formulation, system, and method for additive manufacturing of a polishing pad. The formulation includes monomer, dispersant, and nanoparticles. A method of preparing the formulation includes adding a dispersant that is a polyester derivative to monomer, adding metal-oxide nanoparticles to the monomer, and subjecting the monomer having the nanoparticles and dispersant to sonication to disperse the nanoparticles in the monomer.

公开(公告)号：US20230219190A1

公开(公告)日：2023-07-13

申请号：US18124529

申请日：2023-03-21

Applicant: Applied Materials, Inc.

Inventor： Uma Sridhar ,  Sivapackia Ganapathiappan ,  Ashwin Murugappan Chockalingam ,  Mayu Felicia Yamamura ,  Daniel Redfield ,  Rajeev Bajaj ,  Yingdong Luo ,  Nag B. Patibandla

IPC: B24B37/24 ,  B24B37/22 ,  B33Y80/00 ,  B33Y70/00

CPC classification number: B24B37/24 ,  B24B37/22 ,  B33Y80/00 ,  B33Y70/00

Abstract: Interpenetrating polymer networks (IPNs) for a forming polishing pad for a semiconductor fabrication operation are disclosed. Techniques for forming the polishing pads are provided. In an exemplary embodiment, a polishing pad includes an interpenetrating polymer network formed from a free-radically polymerized material and a cationically polymerized material.

公开(公告)号：US20210379726A1

公开(公告)日：2021-12-09

申请号：US16897195

申请日：2020-06-09

Applicant: Applied Materials, Inc

Inventor： Uma Sridhar ,  Sivapackia Ganapathiappan ,  Ashwin Murugappan Chockalingam ,  Rajeev Bajaj ,  Daniel Redfield ,  Mayu Felicia Yamamura ,  Yingdong Luo ,  Nag B. Patibandla

IPC: B24B37/24 ,  C09D11/102 ,  C09D11/101 ,  B33Y80/00 ,  B29C64/112 ,  B33Y10/00 ,  B33Y70/00

Abstract: A polishing pad for a semiconductor fabrication operation includes a polishing region and a window region, wherein both regions are made of an interpenetrating polymer network formed from a free-radically polymerized material and a cationically polymerized material.