公开(公告)号：US20210384040A1

公开(公告)日：2021-12-09

申请号：US17408943

申请日：2021-08-23

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. CITLA ,  Jethro TANNOS ,  Jingyi LI ,  Douglas A. BUCHBERGER, JR. ,  Zhong Qiang HUA ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: H01L21/311 ,  H01L21/762 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/515 ,  H01L21/02 ,  C23C16/509 ,  C23C16/517 ,  C23C16/505

Abstract: Embodiments of the present invention provide an apparatus and methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications. In one embodiment, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.

公开(公告)号：US20210035619A1

公开(公告)日：2021-02-04

申请号：US16525470

申请日：2019-07-29

Applicant: Applied Materials, Inc.

Inventor： John O. DUKOVIC ,  Srinivas D. NEMANI ,  Ellie Y. YIEH ,  Praburam GOPALRAJA ,  Steven Hiloong WELCH ,  Bhargav S. CITLA

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

Abstract: One or more embodiments described herein generally relate to patterning semiconductor film stacks. Unlike in conventional embodiments, the film stacks herein are patterned without the need of etching the magnetic tunnel junction (MTJ) stack. Instead, the film stack is etched before the MTJ stack is deposited such that the spin on carbon layer and the anti-reflective coating layer are completely removed and a trench is formed within the dielectric capping layer and the oxide layer. Thereafter, MTJ stacks are deposited on the buffer layer and on the dielectric capping layer. An oxide capping layer is deposited such that it covers the MTJ stacks. An oxide fill layer is deposited over the oxide capping layer and the film stack is polished by chemical mechanical polishing (CMP). The embodiments described herein advantageously result in no damage to the MTJ stacks since etching is not required.

公开(公告)号：US20210305501A1

公开(公告)日：2021-09-30

申请号：US17328491

申请日：2021-05-24

Applicant: Applied Materials, Inc.

Inventor： John O. DUKOVIC ,  Srinivas D. NEMANI ,  Ellie Y. YIEH ,  Praburam GOPALRAJA ,  Steven Hiloong WELCH ,  Bhargav S. CITLA

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/02

Abstract: One or more embodiments described herein generally relate to patterning semiconductor film stacks. Unlike in conventional embodiments, the film stacks herein are patterned without the need of etching the magnetic tunnel junction (MTJ) stack. Instead, the film stack is etched before the MTJ stack is deposited such that the spin on carbon layer and the anti-reflective coating layer are completely removed and a trench is formed within the dielectric capping layer and the oxide layer. Thereafter, MTJ stacks are deposited on the buffer layer and on the dielectric capping layer. An oxide capping layer is deposited such that it covers the MTJ stacks. An oxide fill layer is deposited over the oxide capping layer and the film stack is polished by chemical mechanical polishing (CMP). The embodiments described herein advantageously result in no damage to the MTJ stacks since etching is not required.

公开(公告)号：US20250137119A1

公开(公告)日：2025-05-01

申请号：US18495330

申请日：2023-10-26

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. CITLA ,  Shreyas SHUKLA ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: C23C16/26 ,  C23C16/04 ,  H01L21/02 ,  H01L21/311

Abstract: The present disclosure provides methods and apparatus that facilitate the formation of high-quality carbon gapfill structures and that address the issues related to conventional carbon gapfill methods. In certain embodiments, the carbon gapfill methods and apparatus described herein include plasma enhanced CVD (PECVD) or flowable CVD (FCVD) processes to gapfill structures with high-quality, and stable carbon films.

公开(公告)号：US20210193461A1

公开(公告)日：2021-06-24

申请号：US17192882

申请日：2021-03-04

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. CITLA ,  Mei-Yee SHEK ,  Srinivas D. NEMANI

IPC: H01L21/02 ,  C23C14/02 ,  C23C14/06 ,  H01L21/033 ,  C23C14/35

Abstract: Embodiments described herein provide for post deposition anneal of a substrate, having an amorphous carbon layer deposited thereon, to desirably reduce variations in local stresses thereacross. In one embodiment, a method of processing a substrate includes positioning a substrate, having an amorphous carbon layer deposited thereon, in a first processing volume, flowing an anneal gas into the first processing volume, heating the substrate to an anneal temperature of not more than about 450° C., and maintaining the substrate at the anneal temperature for about 30 seconds or more. Herein, the amorphous carbon layer was deposited on the substrate using a method which included positioning the substrate on a substrate support disposed in a second processing volume, flowing a processing gas into the second processing volume, applying pulsed DC power to a carbon target disposed in the second processing volume, forming a plasma of the processing gas, and depositing the amorphous carbon layer on the substrate.

公开(公告)号：US20200090946A1

公开(公告)日：2020-03-19

申请号：US16132837

申请日：2018-09-17

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. CITLA ,  Jethro TANNOS ,  Jingyi LI ,  Douglas A. BUCHBERGER, JR. ,  Zhong Qiang HUA ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: H01L21/311 ,  H01L21/762 ,  H01L21/67 ,  H01L21/3065 ,  H01J37/32

Abstract: Embodiments of the present invention provide an apparatus and methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications. In one embodiment, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.