公开(公告)号：US20220359224A1

公开(公告)日：2022-11-10

申请号：US17307383

申请日：2021-05-04

Applicant: Applied Materials, Inc.

Inventor： Hao JIANG ,  Chi LU ,  He REN ,  Mehul NAIK

IPC: H01L21/3213 ,  H01L21/033 ,  H01L21/67 ,  H01J37/32

Abstract: Methods and apparatus for processing a substrate are provided. For example, a method of processing a substrate comprises supplying oxygen (O2) into a processing volume of an etch chamber to react with a silicon-based hardmask layer atop a base layer of ruthenium to form a covering of an SiO-like material over the silicon-based hardmask layer and etching the base layer of ruthenium using at least one of O2 or chloride (Cl2) while supplying nitrogen (N2) to sputter some of the SiO-like material onto an exposed ruthenium sidewall created during etching.