公开(公告)号：US20200211834A1

公开(公告)日：2020-07-02

申请号：US16725226

申请日：2019-12-23

Applicant: Applied Materials, Inc.

Inventor： Chuanxi YANG ,  Hang YU ,  Sanjay KAMATH ,  Deenesh PADHI ,  Honggun KIM ,  Euhngi LEE ,  Zubin HUANG ,  Diwakar N. KEDLAYA ,  Rui CHENG ,  Karthik JANAKIRAMAN

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/02 ,  C23C16/513

Abstract: Methods for forming the silicon boron nitride layer are provided. The method includes positioning a substrate on a pedestal in a process region within a process chamber, heating a pedestal retaining the substrate, and introducing a first flow of a first process gas and a second flow of a second process gas to the process region. The first flow of the first process gas contains silane, ammonia, helium, nitrogen, argon, and hydrogen. The second flow of the second process gas contains diborane and hydrogen. The method also includes forming a plasma concurrently with the first flow of the first process gas and the second flow of the second process gas to the process region and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit the silicon boron nitride layer on the substrate.

公开(公告)号：US20240304437A1

公开(公告)日：2024-09-12

申请号：US18650014

申请日：2024-04-29

Applicant: Applied Materials, Inc.

Inventor： Chuanxi YANG ,  Hang YU ,  Sanjay KAMATH ,  Deenesh PADHI ,  Honggun KIM ,  Euhngi LEE ,  Zubin HUANG ,  Diwakar N. KEDLAYA ,  Rui CHENG ,  Karthik JANAKIRAMAN

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/34 ,  C23C16/513

CPC classification number: H01L21/0217 ,  C23C16/0209 ,  C23C16/345 ,  C23C16/513 ,  H01L21/02274

Abstract: Capacitor devices containing silicon boron nitride with high boron concentration are provided. In one or more examples, a capacitor device is provided and contains a stopper layer containing silicon boron nitride and disposed on a substrate, a dielectric layer disposed on the stopper layer, vias formed within the dielectric layer and the stopper layer, metal contacts disposed on bottoms of the vias, a nitride barrier layer containing a metal nitride material and disposed on walls of the vias and disposed on the metal contacts, and an oxide layer disposed within the vias on the nitride barrier layer, wherein the oxide layer contains one or more holes or voids formed therein. The silicon boron nitride contains about 18 atomic percent (at %) to about 50 at % of boron.