公开(公告)号：US20020086547A1

公开(公告)日：2002-07-04

申请号：US09905172

申请日：2001-07-13

Applicant: Applied Materials, Inc.

Inventor： David S. Mui ,  Wei Liu ,  Thorsten Lill ,  Christopher Dennis Bencher ,  Yuxiang May Wang

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/0276 ,  H01L21/28035 ,  H01L21/3081 ,  H01L21/3088 ,  H01L21/31138 ,  H01L21/3146 ,  H01L21/32137 ,  H01L21/32139

Abstract: A multilayer antireflective hard mask structure is disclosed. The structure comprises: (a) a CVD organic layer, wherein the CVD organic layer comprises carbon and hydrogen; and (b) a dielectric layer over the CVD organic layer. The dielectric layer is preferably a silicon oxynitride layer, while the CVD organic layer preferably comprises 70-80% carbon, 10-20% hydrogen and 5-15% nitrogen. Also disclosed are methods of forming and trimming such a multilayer antireflective hard mask structure. Further disclosed are methods of etching a substrate structure using a mask structure that contains a CVD organic layer and optionally has a dielectric layer over the CVD organic layer.

Abstract translation: 公开了一种多层抗反射硬掩模结构。 该结构包括：（a）CVD有机层，其中CVD有机层包含碳和氢; 和（b）CVD有机层上的电介质层。 电介质层优选为氮氧化硅层，而CVD有机层优选包含70-80％的碳，10-20％的氢和5-15％的氮。 还公开了形成和修整这种多层抗反射硬掩模结构的方法。 还公开了使用包含CVD有机层并且可选地在CVD有机层上具有介电层的掩模结构来蚀刻衬底结构的方法。