公开(公告)号：US20020185469A1

公开(公告)日：2002-12-12

申请号：US10194167

申请日：2002-07-11

Applicant: Applied Materials, Inc.

Inventor： Dragan Podlesnik ,  Thorsten Lill ,  Jeff Chinn ,  Shaoher X. Pan ,  Anisul Khan ,  Maocheng Li ,  Yiqiong Wang

IPC: C23F001/00 ,  B44C001/22 ,  C03C015/00 ,  C03C025/68

CPC classification number: H01L27/1087 ,  B81B2201/052 ,  B81B2203/0315 ,  B81B2203/033 ,  B81C1/00119 ,  B81C2201/016 ,  H01L21/3065 ,  H01L21/3086

Abstract: The present disclosure pertains to our discovery of a particularly efficient method for etching a multi-part cavity in a substrate. The method provides for first etching a shaped opening, depositing a protective layer over at least a portion of the inner surface of the shaped opening, and then etching a shaped cavity directly beneath and in continuous communication with the shaped opening. The protective layer protects the etch profile of the shaped opening during etching of the shaped cavity, so that the shaped opening and the shaped cavity can be etched to have different shapes, if desired. In particular embodiments of the method of the invention, lateral etch barrier layers and/or implanted etch stops are also used to direct the etching process. The method of the invention can be applied to any application where it is necessary or desirable to provide a shaped opening and an underlying shaped cavity having varying shapes. The method is also useful whenever it is necessary to maintain tight control over the dimensions of the shaped opening.

Abstract translation: 本公开涉及我们发现用于蚀刻衬底中的多部分空腔的特别有效的方法。 该方法提供了首先蚀刻成形开口，在成形开口的内表面的至少一部分上沉积保护层，然后直接在成形开口下面蚀刻成形腔，并与成形开口连续连通。 保护层在蚀刻成形腔体期间保护成形开口的蚀刻轮廓，从而如果需要，成形开口和成形腔体可以被蚀刻以具有不同的形状。 在本发明方法的特定实施例中，横向蚀刻阻挡层和/或注入的蚀刻停止点也用于引导蚀刻工艺。 本发明的方法可以应用于需要或期望提供具有不同形状的成形开口和下面的成形腔的任何应用。 只要需要对成形开口的尺寸进行严格控制，该方法也是有用的。

公开(公告)号：US20040263827A1

公开(公告)日：2004-12-30

申请号：US10608670

申请日：2003-06-26

Applicant: Applied Materials, Inc.

Inventor： Songlin Xu ,  Thorsten Lill

IPC: G01N021/00 ,  G01L021/30

CPC classification number: H01J37/32862 ,  G01N21/68 ,  H01J37/32935 ,  H01J37/32972

Abstract: A new methodology of monitoring process drift and chamber seasoning is presented based on the discovery of the strong correlation between chamber surface condition and free radical density in a plasma. Lower free radical density indicates either there is a significant process drift in the case of production wafer etching or that the chamber needs more seasoning before resuming production wafer etching. Free radical density in the plasma is monitored through measuring the emission intensities of free radicals in the plasma by an optical spectrometer. A timely detection of the extent of process drift and chamber seasoning can help to minimize the chamber downtime and improve its throughput significantly. Such method can also be implemented in existing production wafer etching or chamber seasoning practices in an in-situ, real-time, and non-intrusive manner.

Abstract translation: 基于发现等离子体中室表面状态与自由基密度之间的强相关性，提出了监测过程漂移和室内调节的新方法。 较低的自由基密度表示在生产晶片蚀刻的情况下存在显着的工艺漂移，或者在恢复生产晶片蚀刻之前，室需要更多的调味。 通过光谱仪测量等离子体中自由基的发射强度来监测等离子体中的自由基密度。 及时检测过程漂移和室内调节的程度可以帮助最大限度地减少室内停机时间，并显着提高其产量。 这种方法也可以以现场，实时和非侵入的方式在现有的生产晶片蚀刻或室调节实践中实现。

公开(公告)号：US20020086547A1

公开(公告)日：2002-07-04

申请号：US09905172

申请日：2001-07-13

Applicant: Applied Materials, Inc.

Inventor： David S. Mui ,  Wei Liu ,  Thorsten Lill ,  Christopher Dennis Bencher ,  Yuxiang May Wang

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/0276 ,  H01L21/28035 ,  H01L21/3081 ,  H01L21/3088 ,  H01L21/31138 ,  H01L21/3146 ,  H01L21/32137 ,  H01L21/32139

Abstract: A multilayer antireflective hard mask structure is disclosed. The structure comprises: (a) a CVD organic layer, wherein the CVD organic layer comprises carbon and hydrogen; and (b) a dielectric layer over the CVD organic layer. The dielectric layer is preferably a silicon oxynitride layer, while the CVD organic layer preferably comprises 70-80% carbon, 10-20% hydrogen and 5-15% nitrogen. Also disclosed are methods of forming and trimming such a multilayer antireflective hard mask structure. Further disclosed are methods of etching a substrate structure using a mask structure that contains a CVD organic layer and optionally has a dielectric layer over the CVD organic layer.

Abstract translation: 公开了一种多层抗反射硬掩模结构。 该结构包括：（a）CVD有机层，其中CVD有机层包含碳和氢; 和（b）CVD有机层上的电介质层。 电介质层优选为氮氧化硅层，而CVD有机层优选包含70-80％的碳，10-20％的氢和5-15％的氮。 还公开了形成和修整这种多层抗反射硬掩模结构的方法。 还公开了使用包含CVD有机层并且可选地在CVD有机层上具有介电层的掩模结构来蚀刻衬底结构的方法。