Method and apparatus for improved electroplating fill of an aperture
    1.
    发明申请
    Method and apparatus for improved electroplating fill of an aperture 失效
    用于改善孔的电镀填充物的方法和装置

    公开(公告)号:US20030194850A1

    公开(公告)日:2003-10-16

    申请号:US10124095

    申请日:2002-04-16

    CPC classification number: H01L21/2855 H01L21/76879

    Abstract: A method and apparatus is provided for filling apertures formed in a substrate surface by depositing materials that selectively inhibit or limit the formation or growth of subsequent layers used to fill an aperture. In one aspect, a method is provided for processing a substrate including providing a substrate having a field and apertures formed therein, wherein the apertures each have a bottom and sidewalls, depositing a seed layer on the bottom and sidewalls of the apertures, depositing a growth-inhibiting layer on at least one of the field of the substrate or an upper portion of the sidewalls of the apertures, and depositing a conductive layer on the growth-inhibiting layer and the seed layer. Deposition of the growth-inhibiting layer improves fill of the aperture from the bottom of the aperture up to the field of the substrate.

    Abstract translation: 提供了一种方法和装置,用于通过沉积选择性地抑制或限制用于填充孔的后续层的形成或生长的材料来填充形成在衬底表面中的孔。 在一个方面,提供了一种用于处理衬底的方法,包括提供具有形成在其中的场和孔的衬底,其中每个孔具有底部和侧壁,在孔的底部和侧壁上沉积种子层,沉积生长 在衬底的场中的至少一个或孔的侧壁的上部中的至少一个上的抑制层,并且在生长抑制层和种子层上沉积导电层。 生长抑制层的沉积改善了孔的填充,从孔的底部到基底的场。

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