公开(公告)号：US20230086917A1

公开(公告)日：2023-03-23

申请号：US18052542

申请日：2022-11-03

Applicant: Applied Materials, Inc.

Inventor： Yi Zhou ,  Seul Ki Ahn ,  Seung-Young Son ,  Li-Te Chang ,  Sunil Srinivasan ,  Rajinder Dhindsa

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  C23C16/44 ,  H01L21/3065 ,  B08B7/00

Abstract: A method for removing etchant byproduct from an etch reactor and discharging a substrate from an electrostatic chuck of the etch reactor is provided. One or more layers on a substrate electrostatically secured to an electrostatic chuck within a chamber of the etch reactor is etched using a first plasma, causing an etchant byproduct to be generated. A portion of the one or more layers are covered by a photoresist. After the etching is complete, a second plasma is provided into the chamber for a time period sufficient to trim the photoresist and remove a portion of the etchant byproduct. A second time period sufficient to electrostatically discharge the substrate using the second plasma is determined. Responsive to deactivating one or more chucking electrodes of the electrostatic chuck, the second plasma is provided into the chamber for the second time period and the substrate is removed from the chamber.

公开(公告)号：US12255055B2

公开(公告)日：2025-03-18

申请号：US18052542

申请日：2022-11-03

Applicant: Applied Materials, Inc.

Inventor： Yi Zhou ,  Seul Ki Ahn ,  Seung-Young Son ,  Li-Te Chang ,  Sunil Srinivasan ,  Rajinder Dhindsa

IPC: H01J37/32 ,  B08B7/00 ,  C23C16/44 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/683

Abstract: A method for removing etchant byproduct from an etch reactor and discharging a substrate from an electrostatic chuck of the etch reactor is provided. One or more layers on a substrate electrostatically secured to an electrostatic chuck within a chamber of the etch reactor is etched using a first plasma, causing an etchant byproduct to be generated. A portion of the one or more layers are covered by a photoresist. After the etching is complete, a second plasma is provided into the chamber for a time period sufficient to trim the photoresist and remove a portion of the etchant byproduct. A second time period sufficient to electrostatically discharge the substrate using the second plasma is determined. Responsive to deactivating one or more chucking electrodes of the electrostatic chuck, the second plasma is provided into the chamber for the second time period and the substrate is removed from the chamber.

公开(公告)号：US11521838B2

公开(公告)日：2022-12-06

申请号：US16224699

申请日：2018-12-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Yi Zhou ,  Seul Ki Ahn ,  Seung-Young Son ,  Li-Te Chang ,  Sunil Srinivasan ,  Rajinder Dhindsa

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/683 ,  C23C16/44 ,  B08B7/00

Abstract: A method for removing etchant byproduct from an etch reactor and discharging a substrate from an electrostatic chuck of the etch reactor is provided. A substrate may be electrostatically secured to an electrostatic chuck within a chamber of an etch reactor. A first plasma may be provided into the chamber to etch the substrate, causing an etchant byproduct to be generated. After the etching is complete, a second plasma may be provided into the chamber, wherein the second plasma is an oxygen containing plasma. The etchant byproduct may be removed and the first substrate may be discharged using the second plasma. The first substrate may be removed from the chamber and a second substrate may be inserted into the chamber without first performing an in-situ cleaning between the removal of the first substrate and the insertion of the second substrate.