公开(公告)号：US20200235006A1

公开(公告)日：2020-07-23

申请号：US16564489

申请日：2019-09-09

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan WU ,  Nikolaos BEKIARIS ,  Mehul B. NAIK ,  Jin Hee PARK ,  Mark Hyun LEE

IPC: H01L21/768 ,  H01L21/67 ,  H01L21/285 ,  H01L21/288 ,  H01L23/528 ,  H01L23/532

Abstract: In one implementation, a method of forming a cobalt layer on a substrate is provided. The method comprises forming a barrier and/or liner layer on a substrate having a feature definition formed in a first surface of the substrate, wherein the barrier and/or liner layer is formed on a sidewall and bottom surface of the feature definition. The method further comprises exposing the substrate to a ruthenium precursor to form a ruthenium-containing layer on the barrier and/or liner layer. The method further comprises exposing the substrate to a cobalt precursor to form a cobalt seed layer atop the ruthenium-containing layer. The method further comprises forming a bulk cobalt layer on the cobalt seed layer to fill the feature definition.

公开(公告)号：US20180211872A1

公开(公告)日：2018-07-26

申请号：US15874041

申请日：2018-01-18

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan WU ,  Nikolaos BEKIARIS ,  Mehul B. NAIK ,  Jin Hee PARK ,  Mark Hyun LEE

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L21/288 ,  H01L21/285

CPC classification number: H01L21/76846 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/2885 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67207 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76882 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53252

Abstract: In one implementation, a method of forming a cobalt layer on a substrate is provided. The method comprises forming a barrier and/or liner layer on a substrate having a feature definition formed in a first surface of the substrate, wherein the barrier and/or liner layer is formed on a sidewall and bottom surface of the feature definition. The method further comprises exposing the substrate to a ruthenium precursor to form a ruthenium-containing layer on the barrier and/or liner layer. The method further comprises exposing the substrate to a cobalt precursor to form a cobalt seed layer atop the ruthenium-containing layer. The method further comprises forming a bulk cobalt layer on the cobalt seed layer to fill the feature definition.