公开(公告)号：US20170314126A1

公开(公告)日：2017-11-02

申请号：US15466962

申请日：2017-03-23

Applicant: Applied Materials, Inc.

Inventor： Agus Sofian TJANDRA ,  Martin John RIPLEY

IPC: C23C16/458 ,  C23C16/46 ,  C23C16/455

CPC classification number: C23C16/4584 ,  C23C16/45502 ,  C23C16/45563 ,  C23C16/46 ,  H01L21/67115

Abstract: Implementations of the present disclosure provide apparatus and method for improving gas distribution during thermal processing. One implementation of the present disclosure provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support has a substrate supporting surface, a gas source assembly coupled to an inlet of the chamber body, an exhaust assembly coupled to an outlet of the chamber body, and a side gas assembly coupled to a sidewall of the chamber body, wherein the side gas assembly comprises a gas inlet pointed in a direction that is tangential to the edge of the substrate supporting surface, and wherein the gas inlet, the inlet of the chamber body, and the outlet of the chamber body are angularly offset at about 90° with respect to each other, and the gas inlet, the inlet of the chamber body, and the outlet of the chamber body are intersected by a common plane.

公开(公告)号：US20240162011A1

公开(公告)日：2024-05-16

申请号：US17987679

申请日：2022-11-15

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara SHONO ,  Vladimir NAGORNY ,  Rene GEORGE ,  Vilen K. NESTOROV ,  Martin John RIPLEY ,  Christopher S. OLSEN

IPC: H01J37/32

CPC classification number: H01J37/32357 ,  H01J37/32339 ,  H01J37/3244

Abstract: Embodiments of the present disclosure relate to methods and apparatuses of processing a substrate. The apparatus includes a process chamber, the process chamber including a chamber body, a substrate support, and a remote plasma source. The substrate support is configured to support a substrate within the processing region. The remote plasma source is coupled to the chamber body through a connector. The remote plasma source includes a body, an inlet, an inductive coil, and one or more UV sources. The body has a first end, a second end, and a tube spanning between the first end and the second end. The inlet is coupled to a gas source configured to introduce one or more gases into the body through the first end of the body. The inductive coil loops around the tube. The one or more UV sources are coupled to the first end of the body.

公开(公告)号：US20200040453A1

公开(公告)日：2020-02-06

申请号：US16384221

申请日：2019-04-15

Applicant: Applied Materials, Inc.

Inventor： Agus Sofian TJANDRA ,  Martin John RIPLEY

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  H01L21/67

Abstract: Implementations of the present disclosure provide apparatus and method for improving gas distribution during thermal processing. One implementation of the present disclosure provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support has a substrate supporting surface, a gas source assembly coupled to an inlet of the chamber body, an exhaust assembly coupled to an outlet of the chamber body, and a side gas assembly coupled to a sidewall of the chamber body, wherein the side gas assembly comprises a gas inlet pointed in a direction that is tangential to the edge of the substrate supporting surface, and wherein the gas inlet, the inlet of the chamber body, and the outlet of the chamber body are angularly offset at about 90° with respect to each other, and the gas inlet, the inlet of the chamber body, and the outlet of the chamber body are intersected by a common plane.

公开(公告)号：US20140057455A1

公开(公告)日：2014-02-27

申请号：US14043505

申请日：2013-10-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Yoshitaka YOKOTA ,  Norman L. TAM ,  Balasubramanian RAMACHANDRAN ,  Martin John RIPLEY

IPC: H01L21/02

CPC classification number: H01L21/02238 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/28247 ,  H01L21/31662 ,  H01L21/32

Abstract: A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.

Abstract translation: 公开并要求保护半导体器件中含硅材料的选择性氧化的方法。 一方面，快速热处理装置用于通过在富氢气氛中高压下原位蒸汽产生来选择性氧化基板。 衬底中的其它材料，例如金属和阻挡层，不被氧化。