公开(公告)号：US20240162011A1

公开(公告)日：2024-05-16

申请号：US17987679

申请日：2022-11-15

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara SHONO ,  Vladimir NAGORNY ,  Rene GEORGE ,  Vilen K. NESTOROV ,  Martin John RIPLEY ,  Christopher S. OLSEN

IPC: H01J37/32

CPC classification number: H01J37/32357 ,  H01J37/32339 ,  H01J37/3244

Abstract: Embodiments of the present disclosure relate to methods and apparatuses of processing a substrate. The apparatus includes a process chamber, the process chamber including a chamber body, a substrate support, and a remote plasma source. The substrate support is configured to support a substrate within the processing region. The remote plasma source is coupled to the chamber body through a connector. The remote plasma source includes a body, an inlet, an inductive coil, and one or more UV sources. The body has a first end, a second end, and a tube spanning between the first end and the second end. The inlet is coupled to a gas source configured to introduce one or more gases into the body through the first end of the body. The inductive coil loops around the tube. The one or more UV sources are coupled to the first end of the body.

公开(公告)号：US20210322934A1

公开(公告)日：2021-10-21

申请号：US17365791

申请日：2021-07-01

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Lara HAWRYLCHAK ,  Eric Kihara SHONO ,  Kartik SHAH ,  Christopher S. OLSEN ,  Sairaju TALLAVARJULA ,  Kailash PRADHAN ,  Rene GEORGE ,  Johanes F. SWENBERG ,  Stephen MOFFATT

IPC: B01F3/02 ,  B01J8/22 ,  H01L21/67 ,  B01J4/00 ,  C23C16/455

Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.

公开(公告)号：US20210202702A1

公开(公告)日：2021-07-01

申请号：US17202131

申请日：2021-03-15

Applicant: Applied Materials, Inc.

Inventor： Matthew Scott ROGERS ,  Roger CURTIS ,  Lara HAWRYLCHAK ,  Canfeng LAI ,  Bernard L. HWANG ,  Jeffrey A. TOBIN ,  Christopher S. OLSEN ,  Malcolm J. BEVAN

IPC: H01L21/28 ,  H01L21/02 ,  H01J37/32 ,  H01L21/321 ,  H01L27/11524

Abstract: Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

公开(公告)号：US20190382917A1

公开(公告)日：2019-12-19

申请号：US16550933

申请日：2019-08-26

Applicant: Applied Materials, Inc.

Inventor： Christopher S. OLSEN ,  Theresa K. GUARINI ,  Jeffrey TOBIN ,  Lara HAWRYLCHAK ,  Peter STONE ,  Chi Wei LO ,  Saurabh CHOPRA

IPC: C30B25/18 ,  C30B29/08 ,  C30B29/06

Abstract: Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.

公开(公告)号：US20190228942A1

公开(公告)日：2019-07-25

申请号：US16248384

申请日：2019-01-15

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara SHONO ,  Vishwas Kumar PANDEY ,  Christopher S. OLSEN ,  Hansel LO ,  Agus Sofian TJANDRA ,  Taewan KIM ,  Tobin KAUFMAN-OSBORN

IPC: H01J37/04 ,  H01J37/20 ,  H01L21/67

Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.

公开(公告)号：US20190105614A1

公开(公告)日：2019-04-11

申请号：US16116531

申请日：2018-08-29

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Lara HAWRYLCHAK ,  Eric Kihara SHONO ,  Kartik SHAH ,  Christopher S. OLSEN ,  Sairaju TALLAVARJULA ,  Kailash PRADHAN ,  Rene GEORGE ,  Johanes S. SWENBERG ,  Stephen MOFFATT

IPC: B01F3/02 ,  H01L21/67 ,  B01J8/22

Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.

公开(公告)号：US20180347045A1

公开(公告)日：2018-12-06

申请号：US15937076

申请日：2018-03-27

Applicant: Applied Materials, Inc.

Inventor： Christopher S. OLSEN ,  Eric Kihara SHONO ,  Lara HAWRYLCHAK ,  Agus Sofian TJANDRA ,  Chaitanya A. PRASAD

IPC: C23C16/455 ,  C23C16/50 ,  H01L21/67 ,  H01J37/32

Abstract: Embodiments of the present disclosure generally relate to a process chamber for conformal oxidation of high aspect ratio structures. The process chamber includes a liner assembly located in a first side of a chamber body and two pumping ports located in a substrate support portion adjacent a second side of the chamber body opposite the first side. The liner assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the process chamber. The liner assembly may be fabricated from quartz minimize interaction with process gases, such as radicals. The liner assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux. The two pumping ports can be individually controlled to tune the flow of the radicals through the processing region of the process chamber.

公开(公告)号：US20160010206A1

公开(公告)日：2016-01-14

申请号：US14794355

申请日：2015-07-08

Applicant: Applied Materials, Inc.

Inventor： Agus Sofian TJANDRA ,  Christopher S. OLSEN ,  Emre CUVALCI ,  Lara HAWRYLCHAK

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/46 ,  C23C16/52

CPC classification number: C23C16/40 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/46

Abstract: Embodiments disclosed herein generally include a method for forming an oxide layer having improved thickness uniformity on a substrate. The method includes heating a substrate disposed in a processing chamber to a temperature less than about 700 degrees Celsius, flowing a first gas mixture into the processing chamber from a first gas inlet, and flowing a second gas mixture into the processing chamber from a second gas inlet. The composition and flow rate of the second gas mixture, and the composition and flow rate of the first gas mixture are controlled so the oxide layer formed on the substrate has improved thickness uniformity.

Abstract translation: 本文公开的实施方案通常包括用于形成在衬底上具有改善的厚度均匀性的氧化物层的方法。 该方法包括将设置在处理室中的基板加热至低于约700摄氏度的温度，将第一气体混合物从第一气体入口流入处理室，并将第二气体混合物从第二气体流入处理室 进口。 控制第二气体混合物的组成和流速以及第一气体混合物的组成和流速，使得在基板上形成的氧化物层具有改善的厚度均匀性。

公开(公告)号：US20240350994A1

公开(公告)日：2024-10-24

申请号：US18138367

申请日：2023-04-24

Applicant: Applied Materials, Inc.

Inventor： Christopher S. OLSEN ,  Sameh HELMY ,  Hansel LO ,  Eric Kihara SHONO

IPC: B01J6/00

CPC classification number: B01J6/008 ,  B01J2219/00594 ,  B01J2219/00959

Abstract: Systems and methods of orifice driven hydroxyl combustion oxidation include introducing a first gas via at least a first orifice into a processing chamber having a substrate disposed on a substrate support. A second gas is introduced into the processing chamber via a plurality of second orifices. The plurality of second orifices are oriented substantially perpendicular to the at least a first orifice. A radical is produced as a function of the first gas and the second gas while heating the chamber.

公开(公告)号：US20240266146A1

公开(公告)日：2024-08-08

申请号：US18106981

申请日：2023-02-07

Applicant: Applied Materials, Inc.

Inventor： Christopher S. OLSEN ,  Rene GEORGE ,  Victor CALDERON

IPC: H01J37/32

CPC classification number: H01J37/32422 ,  H01J2237/15 ,  H01J2237/3323

Abstract: A process chamber is provided including a chamber body disposed around a process volume, the process volume bounded by one or more interior side walls; a substrate support in the process volume; a plasma source disposed over the substrate support, the plasma source having a top and one or more sides disposed around a plasma-generating volume; and a first deflector positioned at least partially in the process volume, the first deflector comprising an annular body having a top, a bottom, one or more outer side surfaces connecting the top with the bottom, and one or more inner side surfaces connecting the top with the bottom. The one or more outer side surfaces of the annular body are spaced apart from the one or more interior side walls of the process volume.