公开(公告)号：US20190067201A1

公开(公告)日：2019-02-28

申请号：US16102533

申请日：2018-08-13

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan WU ,  Meng Chu TSENG ,  Mehul B. NAIK ,  Ben-Li SHEU

IPC: H01L23/532 ,  H01L21/768

Abstract: Methods for forming a copper seed layer having improved anti-migration properties are described herein. In one embodiment, a method includes forming a first copper layer in a feature, forming a ruthenium layer over the first copper layer in the feature, and forming a second copper layer on the ruthenium layer in the feature. The ruthenium layer substantially locks the copper layer there below in place in the feature, preventing substantial physical migration thereof.