公开(公告)号：US20230343608A1

公开(公告)日：2023-10-26

申请号：US18346433

申请日：2023-07-03

Applicant: Applied Materials, Inc.

Inventor： Rahul Rajeev ,  Yunzhe Yang ,  Abhijit A. Kangude ,  Kedar Joshi

IPC: H01L21/67 ,  C23C16/50 ,  H01J37/32

CPC classification number: H01L21/67017 ,  C23C16/50 ,  H01J37/32715 ,  H01J37/32899 ,  H01J37/3244 ,  H01J2237/332

Abstract: Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.

公开(公告)号：US12198925B2

公开(公告)日：2025-01-14

申请号：US18074849

申请日：2022-12-05

Applicant: Applied Materials, Inc.

Inventor： Shaunak Mukherjee ,  Kang Sub Yim ,  Deenesh Padhi ,  Abhijit A. Kangude ,  Rahul Rajeev ,  Shubham Chowdhuri

IPC: H01L21/02

Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.

公开(公告)号：US20210272800A1

公开(公告)日：2021-09-02

申请号：US16902888

申请日：2020-06-16

Applicant: Applied Materials, Inc.

Inventor： Shaunak Mukherjee ,  Kang Sub Yim ,  Deenesh Padhi ,  Abhijit A. Kangude ,  Rahul Rajeev ,  Shubham Chowdhuri

IPC: H01L21/02

Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.

公开(公告)号：US20250014914A1

公开(公告)日：2025-01-09

申请号：US18773946

申请日：2024-07-16

Applicant: Applied Materials, Inc.

Inventor： Rahul Rajeev ,  Yunzhe Yang ,  Abhijit A. Kangude ,  Kedar Joshi

IPC: H01L21/67 ,  C23C16/50 ,  H01J37/32

Abstract: Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.

公开(公告)号：US20230094180A1

公开(公告)日：2023-03-30

申请号：US18074849

申请日：2022-12-05

Applicant: Applied Materials, Inc.

Inventor： Shaunak Mukherjee ,  Kang Sub Yim ,  Deenesh Padhi ,  Abhijit A. Kangude ,  Rahul Rajeev ,  Shubham Chowdhuri

IPC: H01L21/02

Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.

公开(公告)号：US20220130687A1

公开(公告)日：2022-04-28

申请号：US17077674

申请日：2020-10-22

Applicant: Applied Materials, Inc.

Inventor： Rahul Rajeev ,  Yunzhe Yang ,  Abhijit A. Kangude ,  Kedar Joshi

IPC: H01L21/67 ,  C23C16/50 ,  H01J37/32

Abstract: Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.

公开(公告)号：US12057325B2

公开(公告)日：2024-08-06

申请号：US18346433

申请日：2023-07-03

Applicant: Applied Materials, Inc.

Inventor： Rahul Rajeev ,  Yunzhe Yang ,  Abhijit A. Kangude ,  Kedar Joshi

IPC: H01J37/32 ,  C23C16/50 ,  H01L21/67

CPC classification number: H01L21/67017 ,  C23C16/50 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32899 ,  H01J2237/332

Abstract: Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.

公开(公告)号：US11694908B2

公开(公告)日：2023-07-04

申请号：US17077674

申请日：2020-10-22

Applicant: Applied Materials, Inc.

Inventor： Rahul Rajeev ,  Yunzhe Yang ,  Abhijit A. Kangude ,  Kedar Joshi

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/50

CPC classification number: H01L21/67017 ,  C23C16/50 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32899 ,  H01J2237/332

Abstract: Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.

公开(公告)号：US11594409B2

公开(公告)日：2023-02-28

申请号：US16902888

申请日：2020-06-16

Applicant: Applied Materials, Inc.

Inventor： Shaunak Mukherjee ,  Kang Sub Yim ,  Deenesh Padhi ,  Abhijit A. Kangude ,  Rahul Rajeev ,  Shubham Chowdhuri

IPC: H01L21/02

Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.