公开(公告)号：US12272531B2

公开(公告)日：2025-04-08

申请号：US17716419

申请日：2022-04-08

Applicant: Applied Materials, Inc.

Inventor： Christopher S. Olsen ,  Rene George ,  Tsung-Han Yang ,  David Knapp ,  Lara Hawrylchak

IPC: H01J37/32 ,  C23C8/12 ,  C23C8/36 ,  H01L21/02 ,  H10B69/00

Abstract: A method and apparatus for growing an oxide layer within a feature of a substrate is described herein. The method is suitable for use in semiconductor manufacturing. The oxide layer is formed by exposing a substrate to both a high pressure oxidant exposure and a lower pressure oxygen containing plasma exposure. The high pressure oxidant exposure is performed at a pressure of greater than 10 Torr, while the lower pressure oxygen containing plasma exposure is performed at a pressure of less than about 10 Torr. The features are high-aspect ratio trenches or holes within a stack of silicon oxide and silicon nitride layers.

公开(公告)号：US11486038B2

公开(公告)日：2022-11-01

申请号：US16776204

申请日：2020-01-29

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara Shono ,  Vishwas Kumar Pandey ,  Christopher S. Olsen ,  Kartik Shah ,  Hansel Lo ,  Tobin Kaufman-Osborn ,  Rene George ,  Lara Hawrylchak ,  Erika Hansen

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/52 ,  C23C16/458 ,  C23C16/40

Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions do not intersect a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.

公开(公告)号：US11529592B2

公开(公告)日：2022-12-20

申请号：US17365791

申请日：2021-07-01

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar Pandey ,  Lara Hawrylchak ,  Eric Kihara Shono ,  Kartik Shah ,  Christopher S. Olsen ,  Sairaju Tallavarjula ,  Kailash Pradhan ,  Rene George ,  Johanes F. Swenberg ,  Stephen Moffatt

IPC: C23C16/455 ,  B01F23/10 ,  B01J8/22 ,  H01L21/67 ,  B01J4/00

Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.

公开(公告)号：US11124878B2

公开(公告)日：2021-09-21

申请号：US16049239

申请日：2018-07-30

Applicant: Applied Materials, Inc.

Inventor： Kartik Shah ,  Vishwas Kumar Pandey ,  Kailash Pradhan ,  Sairaju Tallavarjula ,  Rene George ,  Eric Kihara Shono ,  Philip A. Bottini ,  Roger Curtis

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/67 ,  C23C14/56

Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.

公开(公告)号：US11077410B2

公开(公告)日：2021-08-03

申请号：US16116531

申请日：2018-08-29

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar Pandey ,  Lara Hawrylchak ,  Eric Kihara Shono ,  Kartik Shah ,  Christopher S. Olsen ,  Sairaju Tallavarjula ,  Kailash Pradhan ,  Rene George ,  Johanes F. Swenberg ,  Stephen Moffatt

IPC: C23C16/455 ,  B01F3/02 ,  B01J8/22 ,  H01L21/67 ,  B01J4/00

Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.

公开(公告)号：US20240355592A1

公开(公告)日：2024-10-24

申请号：US18138629

申请日：2023-04-24

Applicant: Applied Materials, Inc.

Inventor： Vladimir Nagorny ,  Rene George

IPC: H01J37/32 ,  G06N3/084

CPC classification number: H01J37/32568 ,  G06N3/084 ,  H01J37/32348 ,  H01J37/32449 ,  H01J2237/032 ,  H01J2237/20214

Abstract: A plasma generating component for a process chamber includes a first pair of linear electrodes. Each electrode of the first pair of linear electrodes extends from a first edge of a plasma generating region of the plasma generating component to a second edge of the plasma generating region of the plasma generating component. Electrodes of the first pair of linear electrodes are substantially parallel. The plasma generating component further includes a second pair of linear electrodes, substantially parallel to the first pair of linear electrodes. The plasma generating component further includes a dielectric support to which the first pair of linear electrodes and the second pair of linear electrodes are secured.

公开(公告)号：US11885021B2

公开(公告)日：2024-01-30

申请号：US17317418

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Kartik Shah ,  Vishwas Kumar Pandey ,  Kailash Pradhan ,  Sairaju Tallavarjula ,  Rene George ,  Eric Kihara Shono ,  Philip A. Bottini ,  Roger Curtis

IPC: C23C16/455 ,  H01L21/67 ,  C23C14/56 ,  C23C16/44

CPC classification number: C23C16/45591 ,  C23C14/564 ,  C23C14/566 ,  C23C16/4401 ,  C23C16/45563 ,  H01L21/67126

Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.

公开(公告)号：US20230215702A1

公开(公告)日：2023-07-06

申请号：US17566584

申请日：2021-12-30

Applicant: Applied Materials, Inc.

Inventor： Vladimir Nagorny ,  Rene George ,  Wei Liu

IPC: H01J37/32 ,  H01L21/66 ,  G06N3/08

CPC classification number: H01J37/32486 ,  H01J37/32467 ,  H01L22/20 ,  G06N3/08 ,  H01J2237/3387

Abstract: A system, method, and apparatus for processing substrates. A plasma processing system includes a processing chamber having a chamber body having walls with a first material enclosing an interior volume. The plasma processing system further includes a plasma source designed to expose a substrate disposed within the processing chamber to plasma related fluxes. The first material has a first set of recombination coefficients associated with the plasma related fluxes. The plasma processing system further includes a second material disposed along a first region of the chamber body, the first material having a second set of plasma recombination coefficients associated with the plasma related fluxes. The second set of plasma recombination coefficients is different that the first set of plasma recombination coefficients.

公开(公告)号：US20230033827A1

公开(公告)日：2023-02-02

申请号：US17382332

申请日：2021-07-21

Applicant: Applied Materials, Inc.

Inventor： Vladimir Nagorny ,  Rene George

IPC: H01J37/32 ,  G06N20/00

Abstract: A system and method including a processing device. The processing device receives data including one or more plasma exposure durations of a plasma process. The plasma exposure duration are associated with a set of controlled elements. The processing device causes a each set of controlled elements to switch between a first mode of operation and a second mode of operation. Each set of controlled elements expose appropriate portion of a substrate to the plasma related fluxes. The first set of controlled elements process the substrate at an increased rate while operating in the first mode of operation relative to the second mode of operation. The processing device causes each set of controlled elements to operate in the first mode of operation for the appropriate time duration based on the received plasma exposure duration data.

公开(公告)号：US12139790B2

公开(公告)日：2024-11-12

申请号：US17753524

申请日：2020-09-09

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar Pandey ,  Christopher Olsen ,  Rene George ,  Eric Shono ,  Lara Hawrylchak ,  Erika Hansen ,  Tobin Kaufman-Osborn ,  Hansel Lo ,  Kartik Shah

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01L21/67

Abstract: Embodiments described herein generally relate to a processing system and a method of delivering a reactant gas. The processing system includes a substrate support system, an injection cone, and an intake. The injection cone includes a linear rudder. The linear rudder is disposed such that the flow of reactant gas through the injection cone results in film growth on a specific portion of a substrate. The method includes flowing the gas through the injection cone and delivering the gas onto the substrate below. The localization of the reactant gas, allows for film growth on a specific portion of the substrate.