公开(公告)号：US20180261516A1

公开(公告)日：2018-09-13

申请号：US15918613

申请日：2018-03-12

Applicant: Applied Materials, Inc.

Inventor： Samkuei Lin ,  Ajay Bhatnagar ,  Nitin Ingle

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/786 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L21/823871 ,  H01L21/02603 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/78618 ,  H01L29/78696

Abstract: Processing methods may be performed to expose a contact region on a semiconductor substrate. The methods may include selectively removing a first region of a silicon material between source/drain regions of a semiconductor substrate to expose a first region of oxide material. The methods may include forming a liner over the first region of oxide material and contacting second regions of the silicon material proximate the source/drain regions of the semiconductor substrate. The methods may also include selectively removing the second regions of the silicon material proximate the source/drain regions of the semiconductor substrate to expose a second region of the oxide material. The methods may further include selectively removing the second region of the oxide material from a surface of a contact in the semiconductor structure.

公开(公告)号：US20180261686A1

公开(公告)日：2018-09-13

申请号：US15918528

申请日：2018-03-12

Applicant: Applied Materials, Inc.

Inventor： Samkuei Lin ,  Ajay Bhatnagar ,  Nitin Ingle

IPC: H01L29/66 ,  H01L21/3065 ,  H01L21/768 ,  H01L29/786

CPC classification number: H01L29/66742 ,  H01J2237/3345 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/76897 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/78696 ,  Y02P80/30

Abstract: Processing methods may be performed to form a sidewall spacer on a semiconductor substrate. The methods may include laterally etching a first silicon-containing material relative to a second silicon-containing material. The first silicon-containing material and the second silicon-containing material may be disposed vertically from one another. The first silicon-containing material may also be positioned vertically between two regions of the second silicon-containing material. The methods may also include forming a spacer within a recess defined by the lateral etching between the two regions of the second silicon-containing material. The methods may further include forming a contact material adjacent to and contacting both the second silicon-containing material and the spacer.