公开(公告)号：US20200263301A1

公开(公告)日：2020-08-20

申请号：US16867307

申请日：2020-05-05

Applicant: Applied Materials, Inc.

Inventor： Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ ,  Sanjeev BALUJA ,  Sam H. KIM ,  Tuan Anh NGUYEN

IPC: C23C16/455

Abstract: The present disclosure relates to a semiconductor processing apparatus. The processing chamber includes a chamber body and lid defining an interior volume, a substrate support disposed in the interior volume and a showerhead assembly disposed between the lid and the substrate support. The showerhead assembly includes a faceplate configured to deliver a process gas to a processing region defined between the showerhead assembly and the substrate support and an underplate positioned above the faceplate, defining a first plenum between the lid and the underplate, the having multiple zones, wherein each zone has a plurality of openings that are configured to pass an amount of inert gas from the first plenum into a second plenum defined between the faceplate and the underplate, in fluid communication with the plurality of openings of each zone such that the inert gas mixes with the process gas before exiting the showerhead assembly.

公开(公告)号：US20190304825A1

公开(公告)日：2019-10-03

申请号：US16443185

申请日：2019-06-17

Applicant: Applied Materials, Inc.

Inventor： Dale R. Du BOIS ,  Juan Carlos ROCHA-ALVAREZ ,  Sanjeev BALUJA ,  Ganesh BALASUBRAMANIAN ,  Lipyeow YAP ,  Jianhua ZHOU ,  Thomas NOWAK

IPC: H01L21/68 ,  H01L21/687 ,  H01L21/67 ,  H01L21/324 ,  B05C13/00 ,  H01J37/32 ,  C23C16/458

Abstract: A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering fingers for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering fingers are movably disposed along a periphery of the support surface, and each of the plurality of centering fingers comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

公开(公告)号：US20190226087A1

公开(公告)日：2019-07-25

申请号：US16254806

申请日：2019-01-23

Applicant: Applied Materials, Inc.

Inventor： Yuxing ZHANG ,  Kaushik ALAYAVALLI ,  Kalyanjit GHOSH ,  Sanjeev BALUJA ,  Daniel HWUNG

IPC: C23C16/455

Abstract: Embodiments herein relate to apparatus for gas distribution in a processing chamber. More specifically, aspects of the disclosure relate to a ceramic faceplate. The faceplate generally has a ceramic body. A recess is formed in an upper surface of the faceplate body. A plurality of apertures is formed in the recess through the faceplate. A heater is optionally disposed in the recess to heat the faceplate.

公开(公告)号：US20190122872A1

公开(公告)日：2019-04-25

申请号：US16230766

申请日：2018-12-21

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Sanjeev BALUJA ,  Mayur G. KULKARNI ,  Shailendra SRIVASTAVA ,  Tejas ULAVI ,  Yusheng ALVIN ZHOU ,  Amit Kumar BANSAL ,  Priyanka DASH ,  Zhijun JIANG ,  Ganesh BALASUBRAMANIAN ,  Qiang MA ,  Kaushik ALAYAVALLI ,  Yuxing ZHANG ,  Daniel HWUNG ,  Shawyon JAFARI

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/455

Abstract: Systems and methods for depositing a film in a PECVD chamber while reducing residue buildup in the chamber. In some embodiments disclosed herein, a processing chamber includes a chamber body, a substrate support, a showerhead, and one or more heaters configured to heat the showerhead. In some embodiments, the processing chamber includes a controller.

公开(公告)号：US20180082866A1

公开(公告)日：2018-03-22

申请号：US15703666

申请日：2017-09-13

Applicant: Applied Materials, Inc.

Inventor： Kaushik ALAYAVALLI ,  Ajit BALAKRISHNA ,  Sanjeev BALUJA ,  Amit Kumar BANSAL ,  Matthew James BUSCHE ,  Juan Carlos ROCHA-ALVAREZ ,  Swaminathan T. SRINIVASAN ,  Tejas ULAVI ,  Jianhua ZHOU

IPC: H01L21/67

CPC classification number: H01L21/67103 ,  H01L21/67109 ,  H01L21/67161 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/68792

Abstract: Implementations of the disclosure generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one implementation, a pedestal assembly is disclosed and includes a substrate support comprising a dielectric material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to a support member of the substrate support at a first end of the shaft, and a thermally conductive material disposed at an interface between the support member and the first end of the shaft.

公开(公告)号：US20160181088A1

公开(公告)日：2016-06-23

申请号：US14975133

申请日：2015-12-18

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Mayur G. KULKARNI ,  Sanjeev BALUJA ,  Kien N. CHUC ,  Sungjin KIM ,  Yanjie WANG

IPC: H01L21/02

CPC classification number: C23C16/4412 ,  C23C16/4401 ,  H01J37/32477

Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.

Abstract translation: 本文公开了一种用于处理衬底的处理室。 在一个实施例中，处理室包括设置在处理室的内部容积内的衬套组件，以及设置在室的内部容积中的C形通道，其限定衬套组件。 在另一个实施例中，本文公开了一种设置在处理室的内部容积中的处理套件。 该处理套件包括衬套组件，C通道和设置在内部容积中的隔离器。 C通道和隔离器限定衬套组件。 本文还描述了通过将前体气体流入处理室中将硅基材料沉积在基底上的方法。

公开(公告)号：US20140053866A1

公开(公告)日：2014-02-27

申请号：US13970176

申请日：2013-08-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Sanjeev BALUJA ,  Alexandros T. DEMOS ,  Kelvin CHAN ,  Juan Carlos ROCHA-ALVAREZ ,  Scott A. HENDRICKSON ,  Abhijit KANGUDE ,  Inna TUREVSKY ,  Mahendra CHHABRA ,  Thomas NOWAK ,  Daping YAO ,  Bo XIE ,  Daemian RAJ

IPC: B08B7/00

CPC classification number: C23C16/4405 ,  B08B7/0021 ,  B08B7/0057 ,  C11D11/0041 ,  C23C16/45565 ,  C23C16/482

Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

Abstract translation: 用于UV室的清洁方法包括向腔室中的一个或多个开口提供第一清洁气体，第二清洁气体和净化气体。 第一清洁气体可以是含氧气体，例如臭氧，以除去碳残留物。 第二清洁气体可以是NF3和O2的远程等离子体以除去硅残余物。 UV室可以具有两个UV透明花洒，其与室盖中的UV窗口一起限定靠近UV窗口的气体体积和低于气体体积的分布体积。 吹扫气体可以流过气体体积，同时一个或多个清洁气体流入分配容积以防止清洁气体撞击到UV透明窗口上。

公开(公告)号：US20200325577A1

公开(公告)日：2020-10-15

申请号：US16912417

申请日：2020-06-25

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Mayur G. KULKARNI ,  Sanjeev BALUJA ,  Kien N. CHUC ,  Sungjin KIM ,  Yanjie WANG

IPC: C23C16/44 ,  H01J37/32

Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.

公开(公告)号：US20190226088A1

公开(公告)日：2019-07-25

申请号：US16255120

申请日：2019-01-23

Applicant: Applied Materials, Inc.

Inventor： Yuxing ZHANG ,  Sanjeev BALUJA ,  Kaushik ALAYAVALLI ,  Kalyanjit GHOSH ,  Daniel HWUNG

IPC: C23C16/455

Abstract: Embodiments herein generally relate to gas distribution apparatuses. In one aspect, the disclosure relates to a faceplate having a plurality of apertures therethrough. Thermal chokes are disposed on the faceplate radially outward of the apertures. Seals are disposed at distal ends of the thermal chokes and are thermally separated from a body of the faceplate by the thermal chokes.

公开(公告)号：US20190100839A1

公开(公告)日：2019-04-04

申请号：US16192228

申请日：2018-11-15

Applicant: Applied Materials, Inc.

Inventor： Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ ,  Sanjeev BALUJA ,  Sam H. KIM ,  Tuan Anh NGUYEN

IPC: C23C16/455

Abstract: The present disclosure relates to a semiconductor processing apparatus. The processing chamber includes a chamber body and lid defining an interior volume, a substrate support disposed in the interior volume and a showerhead assembly disposed between the lid and the substrate support. The showerhead assembly includes a faceplate configured to deliver a process gas to a processing region defined between the showerhead assembly and the substrate support and an underplate positioned above the faceplate, defining a first plenum between the lid and the underplate, the having multiple zones, wherein each zone has a plurality of openings that are configured to pass an amount of inert gas from the first plenum into a second plenum defined between the faceplate and the underplate, in fluid communication with the plurality of openings of each zone such that the inert gas mixes with the process gas before exiting the showerhead assembly.