公开(公告)号：US11827999B2

公开(公告)日：2023-11-28

申请号：US17146572

申请日：2021-01-12

Applicant: Applied Materials, Inc.

Inventor： Yen Lin Leow ,  Xinning Luan ,  Hui Chen ,  Kirk Allen Fisher ,  Shawn Thomas

IPC: C30B25/16 ,  C30B29/36 ,  C30B29/68 ,  C30B25/18 ,  C30B25/10

CPC classification number: C30B25/16 ,  C30B25/10 ,  C30B25/18 ,  C30B29/36 ,  C30B29/68

Abstract: Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.

公开(公告)号：US12180611B2

公开(公告)日：2024-12-31

申请号：US18492482

申请日：2023-10-23

Applicant: Applied Materials, Inc.

Inventor： Yen Lin Leow ,  Xinning Luan ,  Hui Chen ,  Kirk Allen Fisher ,  Shawn Thomas

IPC: C30B25/16 ,  C30B25/10 ,  C30B25/18 ,  C30B29/36 ,  C30B29/68

Abstract: Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.

公开(公告)号：US20240321584A1

公开(公告)日：2024-09-26

申请号：US18603360

申请日：2024-03-13

Applicant: Applied Materials, Inc.

Inventor： Byeong Chan Lee ,  Benjamin Colombeau ,  Edy Cardona ,  Christopher S. Olsen ,  Shawn Thomas

IPC: H01L21/3065 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L21/3065 ,  H01L21/02057 ,  H01L21/02236 ,  H01L21/02532 ,  H01L29/66439

Abstract: Semiconductor devices, such as gate-all-around (GAA) devices, and methods of forming semiconductor devices are described. Selective oxidation processes that are useful in front-end of line (FEOL) and back-end of line (BEOL) applications and processes are also described. In FEOL processes, for example, selective oxidation protects silicon germanium (SiGe) layers during etching silicon (Si) channel recess when there is no dielectric inner spacer present. In BEOL processes, for example, selective oxidation protects growth of silicon germanium (SiGe) layers on the sidewall of a superlattice structure during bottom-up epitaxial growth.