公开(公告)号：US20220367236A1

公开(公告)日：2022-11-17

申请号：US17497881

申请日：2021-10-08

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Yongjing Lin ,  Satish Radhakrishnan ,  Haoyan Sha ,  Shih Chung Chen ,  Mario D. Silvetti ,  Mandyam Sriram ,  Vijay D. Parkhe

IPC: H01L21/687 ,  H01L21/683 ,  C23C16/458 ,  C23C16/46

Abstract: Some embodiments of the disclosure relate to methods of modifying a heater pedestal to improve temperature and thickness uniformity. Some embodiments of the disclosure relate to the modified heater pedestals with improved temperature and thickness uniformity. In some embodiments, the height of support mesas in different regions of the pedestal are modified to increase temperature uniformity. In some embodiments, the heater elements are moved above the vacuum channel and purge channel to increase temperature uniformity. In some embodiments, the edge ring is modified to be coplanar with the top of a supported substrate.

公开(公告)号：US20250081593A1

公开(公告)日：2025-03-06

申请号：US18459582

申请日：2023-09-01

Applicant: Applied Materials ,Inc

Inventor： Yongjing Lin ,  Zhihui Liu ,  Sourav Garg ,  Lu Li ,  Haoming Yan ,  Haoyan Sha ,  Bhaskar Jyoti Bhuyan ,  Shih Chung Chen ,  Janardhan Devrajan ,  Srinivas Gandikota

IPC: H01L21/8238 ,  H01L21/02 ,  H01L27/092 ,  H01L29/08 ,  H01L29/423

Abstract: Methods of manufacturing electronic devices, such as transistors (negative metal-oxide-semiconductor (NMOS) transistors (e.g., an N-metal stack) and positive metal-oxide-semiconductor (PMOS) transistors (e.g., a P-metal stack)) are described. Embodiments of the disclosure are directed to methods of improving PMOS transistor performance by inhibiting N-metal layer growth. The present disclosure provides two types of processes to reduce or inhibit N-metal layer growth. The disclosure provides methods which include forming a self-assembled monolayer (SAM) on the metal surface (e.g., titanium nitride (TiN)) of the PMOS, and methods which include forming a silicon-containing layer such as silicon oxide (SiOx) on the TiN surface. These two types of processes significantly reduce or inhibit the subsequent growth of an N-metal layer, such as titanium aluminum carbide (TiAlC), on the TiN surface of the PMOS.

公开(公告)号：US20210134972A1

公开(公告)日：2021-05-06

申请号：US17089047

申请日：2020-11-04

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Jacqueline S. Wrench ,  Srinivas Gandikota ,  Yongjing Lin ,  Steven C.H. Hung ,  Shih Chung Chen ,  Haoyan Sha ,  Chi-Chou Lin

IPC: H01L29/49 ,  H01L29/51 ,  H01L21/28

Abstract: Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiment comprise MoN as a PMOS work function material. Some embodiments comprise TiSiN as a high-κ capping layer. Some embodiments provide improved PMOS bandedge performance. Some embodiments provide improved PMOS bandedge performance with reduced EOT penalty.

公开(公告)号：US20250118563A1

公开(公告)日：2025-04-10

申请号：US18377619

申请日：2023-10-06

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Zhihui Liu ,  Shih Chung Chen ,  Haoyan Sha ,  Alexander Jansen ,  Zhebo Chen ,  Janardhan Devrajan ,  Tza-Jing Gung

IPC: H01L21/285 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

Abstract: One or more embodiments of the disclosure are directed to methods of forming structures that are useful for FEOL and BEOL processes. Embodiments of the present disclosure advantageously provide methods of depositing a gapfill material, such as titanium nitride (TiN), in high aspect ratio (AR) structures with small dimensions. Some embodiments advantageously provide seam-free high-quality TiN films to fill high AR trenches with small dimensions. Embodiments of the present disclosure advantageously provide methods of filling 3D structures, such as FinFETs, GAAs, and the like, with a gapfill material without creating a seam. One or more embodiments include selective deposition processes using a carbon (C) layer in order to provide seam-free TiN gapfill in 3D structures, such as GAA devices.

公开(公告)号：US20240404830A1

公开(公告)日：2024-12-05

申请号：US18203417

申请日：2023-05-30

Applicant: Applied Materials, Inc.

Inventor： Radhika P. Patil ,  Tatsuya E. Sato ,  Haoyan Sha ,  Abinash Tripathy ,  Michael S. Jackson ,  Janardhan Devrajan

IPC: H01L21/28

Abstract: Embodiments of the disclosure relate to methods of depositing seam-free gapfill. In some embodiments, the gapfill consists of titanium nitride. The gapfill methods comprise forming a first layer and a second layer. The firs layer is formed without treatment or densification, while the second layer is formed with periodic treatment. The resulting gapfill in advantageously seam-free.