公开(公告)号：US11271097B2

公开(公告)日：2022-03-08

申请号：US17080519

申请日：2020-10-26

Applicant: Applied Materials, Inc.

Inventor： Steven C. Hung ,  Benjamin Colombeau ,  Abhishek Dube ,  Sheng-Chin Kung ,  Patricia M. Liu ,  Malcolm J. Bevan ,  Johanes Swenberg

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/02

Abstract: Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include forming a silicon layer over a semiconductor substrate. The semiconductor substrate may include silicon germanium. The methods may include oxidizing a portion of the silicon layer to form a sacrificial oxide while maintaining a portion of the silicon layer in contact with the semiconductor substrate. The methods may include removing the sacrificial oxide. The methods may include oxidizing the portion of the silicon layer in contact with the semiconductor substrate to form an oxygen-containing material. The methods may include forming a high-k dielectric material overlying the oxygen-containing material.

公开(公告)号：US20210134986A1

公开(公告)日：2021-05-06

申请号：US17080519

申请日：2020-10-26

Applicant: Applied Materials, Inc.

Inventor： Steven C. Hung ,  Benjamin Colombeau ,  Abhishek Dube ,  Sheng-Chin Kung ,  Patricia M. Liu ,  Malcolm J. Bevan ,  Johanes Swenberg

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786

Abstract: Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include forming a silicon layer over a semiconductor substrate. The semiconductor substrate may include silicon germanium. The methods may include oxidizing a portion of the silicon layer to form a sacrificial oxide while maintaining a portion of the silicon layer in contact with the semiconductor substrate. The methods may include removing the sacrificial oxide. The methods may include oxidizing the portion of the silicon layer in contact with the semiconductor substrate to form an oxygen-containing material. The methods may include forming a high-k dielectric material overlying the oxygen-containing material.

公开(公告)号：US20210104401A1

公开(公告)日：2021-04-08

申请号：US17062286

申请日：2020-10-02

Applicant: Applied Materials, Inc.

Inventor： Steven C. Hung

IPC: H01L21/02 ,  C23C16/02

Abstract: Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include removing a native oxide from a surface of a substrate. The methods may include delivering nitrous oxide to the substrate and thermally annealing the surface to form an oxide-containing interface. The methods may include delivering a nitrogen-containing precursor or an oxygen-containing precursor to a substrate contained in a semiconductor processing chamber. The methods may include forming reactive ligands on an exposed surface of the substrate with the nitrogen-containing precursor or the oxygen-containing precursor. The methods may also include forming a high-k dielectric material overlying the substrate.

公开(公告)号：US20200350157A1

公开(公告)日：2020-11-05

申请号：US16403312

申请日：2019-05-03

Applicant: Applied Materials, Inc.

Inventor： David Chu ,  Steven C. Hung ,  Malcolm J. Bevan ,  Charles Chu ,  Tatsuya E. Sato ,  Shih-Chung Chen ,  Patricia M. Liu ,  Johanes Swenberg

IPC: H01L21/02 ,  H01L21/28

Abstract: Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include delivering a nitrogen-containing precursor or an oxygen-containing precursor to a substrate contained in a semiconductor processing chamber. The methods may include forming reactive ligands on an exposed surface of the substrate with the nitrogen-containing precursor or the oxygen-containing precursor. The methods may also include forming a high-k dielectric material overlying the substrate.