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公开(公告)号:US20200234922A1
公开(公告)日:2020-07-23
申请号:US16790086
申请日:2020-02-13
Applicant: Applied Materials, Inc.
Inventor: Leonid DORF , Evgeny KAMENETSKIY , James ROGERS , Olivier LUERE , Rajinder DHINDSA , Viacheslav PLOTNIKOV
IPC: H01J37/32 , H01L21/311
Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.
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公开(公告)号:US20240395502A1
公开(公告)日:2024-11-28
申请号:US18791966
申请日:2024-08-01
Applicant: Applied Materials, Inc.
Inventor: Leonid DORF , Evgeny KAMENETSKIY , James ROGERS , Olivier LUERE , Rajinder DHINDSA , Viacheslav PLOTNIKOV
IPC: H01J37/32 , H01L21/311 , H01L21/683
Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.
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公开(公告)号:US20200234923A1
公开(公告)日:2020-07-23
申请号:US16790143
申请日:2020-02-13
Applicant: Applied Materials, Inc.
Inventor: Leonid DORF , Evgeny KAMENETSKIY , James ROGERS , Olivier LUERE , Rajinder DHINDSA , Viacheslav PLOTNIKOV
IPC: H01J37/32 , H01L21/311
Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.
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公开(公告)号:US20230326717A1
公开(公告)日:2023-10-12
申请号:US18201358
申请日:2023-05-24
Applicant: Applied Materials, Inc.
Inventor: Leonid DORF , Evgeny KAMENETSKIY , James ROGERS , Olivier LUERE , Rajinder DHINDSA , Viacheslav PLOTNIKOV
IPC: H01L21/311 , H01J37/32
CPC classification number: H01J37/32128 , H01J37/32082 , H01J37/32146 , H01J37/32165 , H01J37/32174 , H01J37/3299 , H01L21/31116 , H01L21/6831
Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.
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公开(公告)号:US20200234921A1
公开(公告)日:2020-07-23
申请号:US16748847
申请日:2020-01-22
Applicant: Applied Materials, Inc.
Inventor: Leonid DORF , Evgeny KAMENETSKIY , James ROGERS , Olivier LUERE , Rajinder DHINDSA , Viacheslav PLOTNIKOV
IPC: H01J37/32 , H01L21/311
Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.
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