公开(公告)号：US20240258161A1

公开(公告)日：2024-08-01

申请号：US18418812

申请日：2024-01-22

Applicant: Applied Materials, Inc.

Inventor： Yong Jin Kim ,  Carmen Leal Cervantes ,  Kevin Kashefi ,  Xingye Wang

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76831 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76868 ,  H01L23/53238 ,  H01L23/53266

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap which resists degradation when exposed to the ambient atmosphere. A barrier layer is selectively deposited on the sidewalls but not on the bottom of the gap. The SAM is removed after selectively depositing the barrier layer on the sidewalls.