公开(公告)号：US20210287900A1

公开(公告)日：2021-09-16

申请号：US16817378

申请日：2020-03-12

Applicant: Applied Materials, Inc.

Inventor： Yixiong YANG ,  Wei LIU ,  Yuan-hui LO ,  Srinivas GANDIKOTA ,  Jacqueline Samantha WRENCH ,  Yongjing LIN ,  Wen Ting CHEN ,  ShihChung CHEN

IPC: H01L21/02

Abstract: The present disclosure provides methods for treating film layers in a substrate including positioning the substrate in a processing volume of a processing chamber. The substrate can have high aspect ratio features extending a depth from a substrate surface to a bottom surface. The feature can have a width defined by a first sidewall and a second sidewall. A film with a composition that includes metal is formed on the substrate surface and the first sidewall, the second sidewall, and the bottom surface of each feature. The film in the feature can have a seam extending substantially parallel to the first and second sidewalls. The film is annealed and exposed to an oxygen radical while converting the metal of the film to a metal oxide. The metal oxide is exposed to a hydrogen radical while converting the metal oxide to a metal fill layer.

公开(公告)号：US20220064785A1

公开(公告)日：2022-03-03

申请号：US17010518

申请日：2020-09-02

Applicant: Applied Materials, Inc.

Inventor： Muhannad MUSTAFA ,  Haoyan SHA ,  Muhammad M. RASHEED ,  Chi-Chou LIN ,  Mario D. SILVETTI ,  Bin CAO ,  Shihchung CHEN ,  Yongjing LIN

IPC: C23C16/44

Abstract: Embodiments of the present disclosure generally relate chamber lids and methods of using such for gas-phase particle reduction. In an embodiment is provided a chamber lid that includes a top wall, a bottom wall, a plurality of vertical sidewalls, and an interior volume within the chamber lid defined by the top wall, the bottom wall, and the plurality of vertical sidewalls. The chamber lid further includes a plurality of air flow apertures, wherein the plurality of air flow apertures is configured to fluidly communicate air into the interior volume and out of the interior volume, and a mesh disposed on a face of at least one of the air flow apertures of the plurality of air flow apertures. In another embodiment is provided a method of processing a substrate in a substrate processing chamber, the substrate processing chamber comprising a chamber lid as described herein.

公开(公告)号：US20200043723A1

公开(公告)日：2020-02-06

申请号：US16515230

申请日：2019-07-18

Applicant: Applied Materials, Inc.

Inventor： Yongjing LIN ,  Tza-Jing GUNG ,  Masaki OGATA ,  Yusheng ZHOU ,  Xinhai HAN ,  Deenesh PADHI ,  Juan Carlos ROCHA ,  Amit Kumar BANSAL ,  Mukund SRINIVASAN

IPC: H01L21/02

Abstract: Embodiments described herein relate to manufacturing layer stacks of oxide/nitride (ON) layers with minimized in-plane distortion (IPD) and lithographic overlay errors. A method of forming a layer stack ON layers includes flowing a first silicon-containing gas, an oxygen-containing gas, and a first dilution gas. A RF power is symmetrically applied to form a first material layer of SiO2. A second silicon-containing gas, a nitrogen-containing gas, and a second dilution gas are flowed. A second RF power is symmetrically applied to form a second material layer of Si3N4. The flowing the first silicon-containing gas, the oxygen-containing gas, and the first dilution gas, the symmetrically applying the first RF power, the flowing the second silicon-containing gas, the nitrogen-containing gas, and the second dilution gas, and the symmetrically applying the second RF power is repeated until a desired number of first material layers and second material layers make up a layer stack.

公开(公告)号：US20170162417A1

公开(公告)日：2017-06-08

申请号：US15370682

申请日：2016-12-06

Applicant: Applied Materials, Inc.

Inventor： Zheng John YE ,  Hiroji HANAWA ,  Juan Carlos ROCHA-ALVAREZ ,  Pramit MANNA ,  Michael Wenyoung TSIANG ,  Allen KO ,  Wenjiao WANG ,  Yongjing LIN ,  Prashant Kumar KULSHRESHTHA ,  Xinhai HAN ,  Bok Hoen KIM ,  Kwangduk Douglas LEE ,  Karthik Thimmavajjula NARASIMHA ,  Ziqing DUAN ,  Deenesh PADHI

IPC: H01L21/683 ,  C23C16/505 ,  C23C16/458

CPC classification number: H01L21/6833 ,  C23C16/4586 ,  C23C16/509 ,  H01J37/32091 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556

Abstract: Techniques are disclosed for methods and apparatuses of an electrostatic chuck suitable for operating at high operating temperatures. In one example, a substrate support assembly is provided. The substrate support assembly includes a substantially disk-shaped ceramic body having an upper surface, a cylindrical sidewall, and a lower surface. The upper surface is configured to support a substrate thereon for processing the substrate in a vacuum processing chamber. The cylindrical sidewall defines an outer diameter of the ceramic body. The lower surface is disposed opposite the upper surface. An electrode is disposed in the ceramic body. A circuit is electrically connected to the electrode. The circuit includes a DC chucking circuit, a first RF drive circuit, and a second RF dive circuit. The DC chucking circuit, the first RF drive circuit and the second RF drive circuit are electrically coupled with the electrode.