公开(公告)号：US20210233765A1

公开(公告)日：2021-07-29

申请号：US17153450

申请日：2021-01-20

Applicant: Applied Materials, Inc.

Inventor： Naomi YOSHIDA ,  He REN ,  Hao JIANG ,  Chenfei SHEN ,  Chi-Chou LIN ,  Hao CHEN ,  Xuesong LU ,  Mehul B. NAIK

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/3205 ,  H01L29/66 ,  B08B5/02

Abstract: Embodiments of the present disclosure generally relate to methods of cleaning a structure and methods of depositing a capping layer in a structure. The method of cleaning a structure includes suppling a cleaning gas, including a first gas including nitrogen (N) and a second gas including fluorine (F), to a bottom surface of a structure. The cleaning gas removes unwanted metal oxide and etch residue from the bottom surface of the structure. The method of depositing a capping layer includes depositing the capping layer over the bottom surface of the structure. The methods described herein reduce the amount of unwanted metal oxides and residue, which improves adhesion of deposited capping layers.

公开(公告)号：US20220064785A1

公开(公告)日：2022-03-03

申请号：US17010518

申请日：2020-09-02

Applicant: Applied Materials, Inc.

Inventor： Muhannad MUSTAFA ,  Haoyan SHA ,  Muhammad M. RASHEED ,  Chi-Chou LIN ,  Mario D. SILVETTI ,  Bin CAO ,  Shihchung CHEN ,  Yongjing LIN

IPC: C23C16/44

Abstract: Embodiments of the present disclosure generally relate chamber lids and methods of using such for gas-phase particle reduction. In an embodiment is provided a chamber lid that includes a top wall, a bottom wall, a plurality of vertical sidewalls, and an interior volume within the chamber lid defined by the top wall, the bottom wall, and the plurality of vertical sidewalls. The chamber lid further includes a plurality of air flow apertures, wherein the plurality of air flow apertures is configured to fluidly communicate air into the interior volume and out of the interior volume, and a mesh disposed on a face of at least one of the air flow apertures of the plurality of air flow apertures. In another embodiment is provided a method of processing a substrate in a substrate processing chamber, the substrate processing chamber comprising a chamber lid as described herein.

公开(公告)号：US20200303250A1

公开(公告)日：2020-09-24

申请号：US16803842

申请日：2020-02-27

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Feiyue MA ,  Kai WU ,  Yu LEI ,  Kazuya DAITO ,  Yi XU ,  Vikash BANTHIA ,  Mei CHANG ,  He REN ,  Raymond Hoiman HUNG ,  Yakuan YAO ,  Avgerinos V. GELATOS ,  David T. OR ,  Jing ZHOU ,  Guoqiang JIAN ,  Chi-Chou LIN ,  Yiming LAI ,  Jia YE ,  Jenn-Yue WANG

IPC: H01L21/768 ,  H01L21/3213 ,  H01L21/02

Abstract: The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.