公开(公告)号：US20150021745A1

公开(公告)日：2015-01-22

申请号：US14336477

申请日：2014-07-21

Applicant: Atlantic lnertial Systems Limited

Inventor： Tracey Hawke ,  Mark Venables ,  lan Sturland ,  Rebecka Eley

IPC: B81C1/00 ,  B81B3/00 ,  H01L21/3065 ,  H01L21/308

CPC classification number: B81C1/00531 ,  B81B3/0064 ,  B81B2201/033 ,  B81B2203/033 ,  B81C1/00388 ,  B81C1/00619 ,  B81C2201/0112 ,  H01L21/3065 ,  H01L21/308

Abstract: A method of reactive ion etching a substrate 46 to form at least a first and a second etched feature (42, 44) is disclosed. The first etched feature (42) has a greater aspect ratio (depth:width) than the second etched feature (44). In a first etching stage the substrate (46) is etched so as to etch only said first feature (42) to a predetermined depth. Thereafter in a second etching stage, the substrate (46) is etched so as to etch both said first and said second features (42, 44) to a respective depth. A mask (40) may be applied to define apertures corresponding in shape to the features (42, 44). The region of the substrate (46) in which the second etched feature (44) is to be produced is selectively masked with a second maskant (50) during the first etching stage, The second maskant (50) is then removed prior to the second etching stage.

Abstract translation: 公开了一种反应离子蚀刻衬底46以形成至少第一和第二蚀刻特征（42,44）的方法。 第一蚀刻特征（42）具有比第二蚀刻特征（44）更大的纵横比（深度：宽度）。 在第一蚀刻阶段中，蚀刻衬底（46）以仅将所述第一特征（42）仅蚀刻到预定深度。 此后，在第二蚀刻阶段，蚀刻衬底（46）以便将所述第一和第二特征（42,44）都蚀刻到相应的深度。 可以施加掩模（40）以限定形状对应于特征（42,44）的孔。 在第一蚀刻阶段期间，用第二掩模（50）选择性地掩蔽其中要产生第二蚀刻特征（44）的衬底（46）的区域，然后在第二蚀刻阶段之前将第二掩模（50） 蚀刻阶段。