公开(公告)号：US20180046817A1

公开(公告)日：2018-02-15

申请号：US15543422

申请日：2016-01-14

Applicant: Atul GUPTA

Inventor： Atul GUPTA

IPC: G06F21/62 ,  G06F21/30 ,  H04L9/32 ,  G06F17/30

CPC classification number: G06F21/6209 ,  G06F16/9566 ,  G06F21/305 ,  H04L9/3263

Abstract: The present invention provides a method and system to facilitate the verification of genuineness of a document by visiting a unique, non-forgeable, permanent URL printed on the document and comparing the document against the original document stored at a database hosted by the system of the present invention. The verifier is given a verification certificate which can also be checked for genuineness by visiting another unique URL printed on the verification certificate.

公开(公告)号：US20120006392A1

公开(公告)日：2012-01-12

申请号：US13175298

申请日：2011-07-01

Applicant: Atul GUPTA

Inventor： Atul GUPTA

IPC: H01L31/06 ,  H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A first facet of each of a plurality of pyramids on a surface of a workpiece is doped to a first dose while a second facet and a third facet of each of the plurality of pyramids is simultaneously doped to a second dose different than the first dose. The first facets may enable low resistance contacts and the second and third facets may enable higher current generation and an improved blue response. Ion implantation may be used to perform the doping.

Abstract translation: 将工件表面上的多个金字塔中的每一个的第一小面掺杂到第一剂量，同时将多个金字塔中的每一个的第二面和第三面同时掺杂到与第一剂量不同的第二剂量。 第一面可以实现低电阻触点，并且第二和第三面可以实现更高的电流产生和改善的蓝色响应。 离子注入可用于进行掺杂。

公开(公告)号：US20100224240A1

公开(公告)日：2010-09-09

申请号：US12781406

申请日：2010-05-17

Applicant: Nicholas BATEMAN ,  Atul GUPTA ,  Paul SULLIVAN

Inventor： Nicholas BATEMAN ,  Atul GUPTA ,  Paul SULLIVAN

IPC: H01L27/142

CPC classification number: H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods of counterdoping a solar cell, particularly an IBC solar cell are disclosed. One surface of a solar cell may require portions to be n-doped, while other portions are p-doped. Traditionally, a plurality of lithography and doping steps are required to achieve this desired configuration. In contrast, one lithography step can be eliminated by the use of a blanket doping of one conductivity and a mask patterned counterdoping process of the opposite conductivity. The areas dosed during the masked patterned doping receive a sufficient dose so as to completely reverse the effect of the blanket doping and achieve a conductivity that is opposite the blanket doping. In another embodiment, the counterdoping is performed by means of a direct patterning technique, thereby eliminating the remaining lithography step. Various methods of direct counterdoping processes are disclosed.

Abstract translation: 公开了一种太阳能电池，特别是IBC太阳能电池的反掺杂方法。 太阳能电池的一个表面可能需要部分被n掺杂，而其它部分是p掺杂的。 传统上，需要多个光刻和掺杂步骤来实现这种期望的配置。 相比之下，可以通过使用一种导电性的覆盖掺杂和具有相反电导率的掩模图案化反向掺杂工艺来消除一个光刻步骤。 在掩模图案化掺杂期间计量的面积接收足够的剂量，以完全反转覆盖掺杂的效果，并获得与覆盖掺杂相反的电导率。 在另一个实施例中，通过直接图案化技术执行反掺杂，从而消除了剩余的光刻步骤。 公开了各种直接反打法的方法。

公开(公告)号：US20080078952A1

公开(公告)日：2008-04-03

申请号：US11537033

申请日：2006-09-29

Applicant: Atul GUPTA ,  Jonathan Gerald England

Inventor： Atul GUPTA ,  Jonathan Gerald England

IPC: H01J37/304 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/1501 ,  H01J2237/24528 ,  H01J2237/3045 ,  H01J2237/30483 ,  H01J2237/31703

Abstract: A technique for improving ion implantation based on ion beam angle-related information is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for improving ion implantation. The method may comprise obtaining angle-related information associated with an ion beam. The method may also comprise calculating, based on the angle-related information, an ion beam angle distribution over a wafer for one or more potential scanning modes. The method may further comprise selecting a desired scanning mode from the one or more potential scanning modes based on an evaluation of performance metric caused by the ion beam angle distribution.

Abstract translation: 公开了一种基于离子束角度相关信息改善离子注入的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于改进离子注入的方法。 该方法可以包括获得与离子束相关联的角度相关信息。 该方法还可以包括基于角度相关信息计算一个或多个潜在扫描模式的晶片上的离子束角度分布。 该方法还可以包括基于由离子束角分布引起的性能度量的评估，从一个或多个潜在扫描模式中选择期望的扫描模式。

公开(公告)号：US20110315899A1

公开(公告)日：2011-12-29

申请号：US13170815

申请日：2011-06-28

Applicant: Russell J. LOW ,  Atul GUPTA ,  William T. WEAVER

Inventor： Russell J. LOW ,  Atul GUPTA ,  William T. WEAVER

IPC: G21K5/10

CPC classification number: H01J37/20 ,  G21K5/10 ,  H01J37/304 ,  H01J37/3045 ,  H01J37/3171 ,  H01J2237/20285 ,  H01J2237/31703 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Glitches during ion implantation of a workpiece, such as a solar cell, can be compensated for. In one instance, a workpiece is implanted during a first pass at a first speed. This first pass results in a region of uneven dose in the workpiece. The workpiece is then implanted during a second pass at a second speed. This second speed is different from the first speed. The second speed may correspond to the entire workpiece or just the region of uneven dose in the workpiece.

Abstract translation: 可以补偿工件（例如太阳能电池）的离子注入期间的毛刺。 在一种情况下，在第一速度的第一次通过期间植入工件。 该第一次通过导致工件中不均匀剂量的区域。 然后在第二次通过期间以第二速度植入工件。 第二速度与第一速度不同。 第二速度可以对应于整个工件或者对应于工件中不均匀剂量的区域。

公开(公告)号：US20100090131A1

公开(公告)日：2010-04-15

申请号：US12640416

申请日：2009-12-17

Applicant: Atul GUPTA ,  Joseph C. Olson

Inventor： Atul GUPTA ,  Joseph C. Olson

IPC: H01J37/317 ,  G21K5/00

CPC classification number: H01L22/14 ,  H01J37/1471 ,  H01J37/3171 ,  H01J2237/1501 ,  H01J2237/24528 ,  H01J2237/24535 ,  H01J2237/24578 ,  H01J2237/3045 ,  H01J2237/31703

Abstract: A method includes directing an ion beam at a plurality of differing incident angles with respect to a target surface of a substrate by tilting the substrate as the ion beam is distributed across the target surface to implant ions into a plurality of portions of the substrate, wherein each one of the plurality of differing incident angles is associated with a different one of the plurality of portions, measuring angle sensitive data from each of the plurality of portions of to the substrate, and determining an angle misalignment between the target surface and the ion beam incident on the target surface from the angle sensitive data.

Abstract translation: 一种方法包括当离子束分布在目标表面上时倾斜衬底，通过使衬底相对于衬底的目标表面引导多个不同入射角的离子束，以将离子注入到衬底的多个部分中，其中 所述多个不同入射角中的每一个与所述多个部分中的不同的一个部分相关联，测量所述多个部分中的每一个到所述基板的角度敏感数据，以及确定所述目标表面和所述离子束之间的角度偏移 从角度敏感数据对目标表面的事件。

公开(公告)号：US20080078953A1

公开(公告)日：2008-04-03

申请号：US11537050

申请日：2006-09-29

Applicant: Atul GUPTA ,  Anthony Renau ,  Donna L. Smatlak ,  Joseph C. Olson

Inventor： Atul GUPTA ,  Anthony Renau ,  Donna L. Smatlak ,  Joseph C. Olson

IPC: H01J37/304 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/302 ,  H01J37/304 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/20228 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/30455 ,  H01J2237/30488 ,  H01J2237/31703

Abstract: A technique for improving ion implantation throughput and dose uniformity is disclosed. In one exemplary embodiment, a method for improving ion implantation throughput and dose uniformity may comprise measuring an ion beam density distribution in an ion beam. The method may also comprise calculating an ion dose distribution across a predetermined region of a workpiece that results from a scan velocity profile, wherein the scan velocity profile comprises a first component and a second component that control a relative movement between the ion beam and the workpiece in a first direction and a second direction respectively, and wherein the ion dose distribution is based at least in part on the ion beam density distribution. The method may further comprise adjusting at least one of the first component and the second component of the scan velocity profile to achieve a desired ion dose distribution in the predetermined region of the workpiece.

Abstract translation: 公开了一种改善离子注入通量和剂量均匀性的技术。 在一个示例性实施例中，用于改善离子注入生产量和剂量均匀性的方法可包括测量离子束中的离子束密度分布。 该方法还可以包括计算由扫描速度分布导致的工件的预定区域上的离子剂量分布，其中扫描速度分布包括第一组分和第二组分，其控制离子束和工件之间的相对运动 在第一方向和第二方向上，并且其中所述离子剂量分布至少部分地基于所述离子束密度分布。 该方法还可以包括调整扫描速度分布的第一分量和第二分量中的至少一个，以在工件的预定区域中实现期望的离子剂量分布。