公开(公告)号：US11814720B2

公开(公告)日：2023-11-14

申请号：US17075132

申请日：2020-10-20

Applicant: Purdue Research Foundation

Inventor： Jean Paul Allain ,  Osman J. El-Atwani ,  Juan Jose Pavon Palacio

IPC: C23C14/22 ,  H01J37/30 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/302

CPC classification number: C23C14/221 ,  B82Y40/00 ,  H01J37/302 ,  H01J37/304 ,  H01J2237/317 ,  Y10S977/896

Abstract: A method for fabricating structures includes on a substrate includes providing the substrate having a substrate surface, and generating nanostructures or microstructures on the substrate surface at least in part by exposing the substrate surface to thermal particles from a thermal particle source while irradiating the substrate surface with an ion beam. The generated nanostructures or microstructures have a smaller surface area than the area of incidence of the ion beam or a beam generated by the thermal particle source. The method also includes obtaining a measurement of a characteristic of the substrate surface and adjusting at least one of the thermal particle source and the ion beam based on the measurement.

公开(公告)号：US20230352263A1

公开(公告)日：2023-11-02

申请号：US17791295

申请日：2020-01-29

Applicant: Hitachi High-Tech Corporation

Inventor： Kengo ASAI ,  Hisayuki TAKASU ,  Toru IWAYA

IPC: H01J37/08 ,  H01J37/305 ,  H01J37/302

CPC classification number: H01J37/08 ,  H01J37/305 ,  H01J37/302 ,  H01J2237/0822 ,  H01J2237/0815

Abstract: An ion milling device which balances high processing speed and a wide processing region with smoothness of a processing surface. The ion milling device includes first to third ion guns that emit unfocused ion beams. An ion beam center of the third ion gun is included in a first plane defined by a normal to a surface of a sample and a mask end, and an ion beam center of the first ion gun and an ion beam center of the second ion gun are included in a second plane. The second plane is inclined toward the mask with respect to the first plane, and an angle formed by the first plane and the second plane is more than 0 degrees and 10 degrees or less. The processing surface of the sample is formed in a region where the emitted ion beams overlap on the surface of the sample.

公开(公告)号：US20230260745A1

公开(公告)日：2023-08-17

申请号：US18136738

申请日：2023-04-19

Applicant: Applied Materials, Inc.

Inventor： Shreyansh P. Patel ,  Graham Wright ,  Daniel Alvarado ,  Daniel R. Tieger ,  Brian S. Gori ,  William R. Bogiages, Jr. ,  Benjamin Oswald ,  Craig R. Chaney

IPC: H01J37/302 ,  H01J37/08

CPC classification number: H01J37/302 ,  H01J37/08 ,  H01J37/3171

Abstract: An ion source with a target holder for holding a solid dopant material is disclosed. The ion source comprises a thermocouple disposed proximate the target holder to monitor the temperature of the solid dopant material. In certain embodiments, a controller uses this temperature information to vary one or more parameters of the ion source, such as arc voltage, cathode bias voltage, extracted beam current, or the position of the target holder within the arc chamber. Various embodiments showing the connections between the controller and the thermocouple are shown. Further, embodiments showing various placement of the thermocouple on the target holder are also presented.

公开(公告)号：US20180130630A1

公开(公告)日：2018-05-10

申请号：US15574873

申请日：2015-05-25

Applicant: Hitachi High-Technologies Corporation

Inventor： Yuki TANI ,  Hisayuki TAKASU ,  Shuichi TAKEUCHI

IPC: H01J27/04 ,  H01J37/302 ,  H01J37/08 ,  H01J37/24 ,  H01J37/305

CPC classification number: H01J27/04 ,  H01J37/08 ,  H01J37/243 ,  H01J37/30 ,  H01J37/302 ,  H01J37/305 ,  H01J2237/08

Abstract: An object of the present invention is to provide an ion milling apparatus capable of processing deposits attached to an ion gun and an ion milling method capable of processing deposits attached to an ion gun. The ion milling apparatus includes gas injection means for injecting a gas toward the ion gun, and the gas injection means included in the ion milling apparatus moves the deposits attached to the ion gun by injecting the gas toward the inside of the ion gun.

公开(公告)号：US09934941B2

公开(公告)日：2018-04-03

申请号：US14644159

申请日：2015-03-10

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Yasuyuki Sonoda

IPC: H01J37/00 ,  H01J37/305 ,  H01J37/302

CPC classification number: H01J37/3053 ,  H01J37/302 ,  H01J37/321 ,  H01J37/32422 ,  H01J2237/334

Abstract: According to one embodiment, an etching apparatus includes a stage in an etching chamber, the stage which holds one of a first substrate and a second substrate, a plasma generator in the etching chamber, the plasma generator which is opposite to the stage and irradiates an ion beam toward the stage, a grid which is provided between the plasma generator and the stage, a supporter supporting the stage, the supporter having a rotational axis in a direction in which the ion beam is irradiated, a controller which is configured to mount the first substrate on the stage and irradiate the ion beam with the beam angle larger than 0° to the first substrate, when an elapsed time from an end of an etching of a predetermined layer in the second substrate is equal to or larger than a predetermined time.

公开(公告)号：US20170358424A1

公开(公告)日：2017-12-14

申请号：US15615324

申请日：2017-06-06

Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： PENG LIU ,  WEI ZHAO ,  XIAO-YANG LIN ,  DUAN-LIANG ZHOU ,  CHUN-HAI ZHANG ,  KAI-LI JIANG ,  SHOU-SHAN FAN

IPC: H01J37/30 ,  C01B32/182 ,  H01J37/302 ,  C01G39/06 ,  B82Y20/00 ,  H01J37/31 ,  H01J37/317 ,  H01J37/305 ,  H01J37/315

CPC classification number: H01J37/3002 ,  B82Y20/00 ,  B82Y35/00 ,  C01B32/182 ,  C01G39/06 ,  C01P2004/24 ,  H01J37/302 ,  H01J37/3056 ,  H01J37/31 ,  H01J37/315 ,  H01J37/3174 ,  Y10S977/734 ,  Y10S977/755 ,  Y10S977/932

Abstract: The disclosure relates to an electronic beam machining system. The system includes a vacuum chamber; an electron gun located in the vacuum chamber and used to emit electron beam; a holder located in the vacuum chamber and used to fix an object; a control computer; and a diffraction unit located in the vacuum chamber; the diffraction unit includes a two-dimensional nanomaterial; the electron beam transmits the two-dimensional nanomaterial to form a transmission electron beam and a plurality of diffraction electron beams; the transmission electron beam and the plurality of diffraction electron beams radiate the object to form a transmission spot and a plurality of diffraction spots.

公开(公告)号：US20170221677A1

公开(公告)日：2017-08-03

申请号：US15500392

申请日：2015-07-29

Applicant: Hitachi High-Technologies Corporation

Inventor： Kengo ASAI ,  Hiroyasu SHICHI ,  Hisayuki TAKASU ,  Toru IWAYA

IPC: H01J37/302 ,  H01J37/08 ,  H01J37/305

CPC classification number: H01J37/302 ,  H01J27/04 ,  H01J37/08 ,  H01J37/243 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J2237/08 ,  H01J2237/30461 ,  H01J2237/3151

Abstract: To provide an ion gun of a penning discharge type capable of narrowing a beam with a low ion beam current at a low acceleration voltage, an ion milling device including the same, and an ion milling method.An ion milling device that controls half width of a beam profile of an ion beam with which a sample is irradiated from an ion gun to be in a range of 200 μm to 350 μm. The device includes: the ion gun that ionizes a gas supplied from the outside, and emits an ion beam; a gas-flow-rate varying unit that varies a flow rate of the gas supplied to the ion gun; and a current measurement unit that measures a current value of the ion beam emitted from the ion gun. The gas-flow-rate varying unit sets a gas flow rate to be higher than a gas flow rate at which the ion beam current has a maximum value based on the current value measured by the current measurement unit and the flow rate of the gas determined by the gas-flow-rate varying unit.

公开(公告)号：US09691585B2

公开(公告)日：2017-06-27

申请号：US14699216

申请日：2015-04-29

Applicant: NuFlare Technology, Inc.

Inventor： Hiroshi Matsumoto ,  Munehiro Ogasawara ,  Ryoichi Yoshikawa

IPC: H01J37/147 ,  H01J37/20 ,  H01J37/302 ,  H01J37/317 ,  H01J37/04

CPC classification number: H01J37/1471 ,  H01J37/045 ,  H01J37/147 ,  H01J37/20 ,  H01J37/302 ,  H01J37/3026 ,  H01J37/317 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/043 ,  H01J2237/0435 ,  H01J2237/202 ,  H01J2237/20278 ,  H01J2237/20285 ,  H01J2237/20292 ,  H01J2237/304 ,  H01J2237/30483 ,  H01J2237/3175

Abstract: A multi charged particle beam writing method includes, shifting a writing position of each corresponding beam to a next writing position by performing another beam deflection of multi charged particle beams, in addition to the beam deflection for a tracking control, while continuing the beam deflection for the tracking control after the maximum writing time has passed; emitting the each corresponding beam in the “on” state to the next writing position having been shifted of the each corresponding beam, during a corresponding writing time while continuing the tracking control; and returning a tracking position such that a next tracking start position is a former tracking start position where the tracking control was started, by resetting the beam deflection for the tracking control after emitting the each corresponding beam to the next writing position having been shifted at least once of the each corresponding beam while continuing the tracking control.

公开(公告)号：US20160071708A1

公开(公告)日：2016-03-10

申请号：US14941897

申请日：2015-11-16

Applicant: Boris L. Druz ,  Piero Sferlazzo ,  Roger P. Fremgen ,  Alan V. Hayes ,  Viktor Kanarov ,  Robert Krause ,  Ira Reiss

Inventor： Boris L. Druz ,  Piero Sferlazzo ,  Roger P. Fremgen ,  Alan V. Hayes ,  Viktor Kanarov ,  Robert Krause ,  Ira Reiss

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/46

CPC classification number: H01J37/3488 ,  C23C14/044 ,  C23C14/221 ,  C23C14/46 ,  H01J37/20 ,  H01J37/302 ,  H01J37/317 ,  H01J37/32752 ,  H01J37/3441 ,  H01J37/3476 ,  H01J2237/0245 ,  H01J2237/045 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/20221 ,  H01J2237/30472 ,  H01J2237/3146

Abstract: Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to the energetic particle beam, to reorient the features relative to the major dimension of the beam.

Abstract translation: 用能量粒子束处理衬底的方法和设备。 衬底上的特征相对于能量粒子束定向，并且通过能量粒子束扫描衬底。 衬底围绕其方位角对称轴周期性地被索引，同时被屏蔽以防止暴露于能量粒子束，以相对于束的主要尺寸重新定向特征。

公开(公告)号：US08883620B1

公开(公告)日：2014-11-11

申请号：US13869456

申请日：2013-04-24

Applicant: Ashwini K. Sinha ,  Ching I Li

Inventor： Ashwini K. Sinha ,  Ching I Li

IPC: H01L21/425 ,  H01L21/265 ,  H01J27/02

CPC classification number: H01J27/02 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/08 ,  H01L21/26506 ,  H01L21/2658

Abstract: A novel process for using enriched and highly enriched dopant gases is provided herein that eliminates the problems currently encountered by end-users from being able to realize the process benefits associated with ion implanting such dopant gases. For a given flow rate within a prescribed range, operating at a reduced total power level of the ion source is designed to reduce the ionization efficiency of the enriched dopant gas compared to that of its corresponding non-enriched or lesser enriched dopant gas. The temperature of the source filament is also reduced, thereby mitigating the adverse effects of fluorine etching and ion source shorting when a fluorine-containing enriched dopant gas is utilized. The reduced levels of total power in combination with a lower ionization efficiency and lower ion source temperature can interact synergistically to improve and extend ion source life, while beneficially maintaining a beam current that does not unacceptably deviate from previously qualified levels.

Abstract translation: 本文提供了一种使用富集和高度富集的掺杂气体的新方法，其消除了终端用户目前遇到的问题，即能够实现与离子注入这种掺杂气体相关的工艺优点。 对于规定范围内的给定流速，在离子源的总功率水平降低的情况下操作，以减少富集的掺杂气体与其相应的非富集或较小浓度的掺杂气体相比的离子化效率。 源极丝的温度也降低，从而在使用富含氟的掺杂气体时减轻氟蚀刻和离子源短路的不利影响。 总功率的降低水平与较低的离子化效率和较低的离子源温度相结合可以相互协调地相互作用，以改善和延长离子源寿命，同时有利地保持不能接受地偏离先前合格水平的束流。