公开(公告)号：US20030160023A1

公开(公告)日：2003-08-28

申请号：US10373235

申请日：2003-02-24

Applicant: BENO CORPORATION

Inventor： In-Yao Lee ,  Chih-Ching Chen

IPC: C03C025/68

CPC classification number: B81C1/0042 ,  B01L3/0241 ,  B41J2/16 ,  B41J2/1629 ,  B41J2/1631 ,  B81B2201/052 ,  B81B2203/0392 ,  B81C1/00595 ,  B81C2201/0136

Abstract: A method of manufacturing a fluid injection device. The method of the present invention applies a compensated geometric shape of the unetched isolating portions to increase the additional compensated portion for etching, or the ion implanting process to reduce the etching rate of the unetched isolating portions. Thus, crosstalk or overshoot in the isolating portions of the fluid injection device can be reduced, and the fluid injection device can be precisely manufactured in a small size.

Abstract translation: 一种制造流体注射装置的方法。 本发明的方法应用未蚀刻绝缘部分的补偿几何形状以增加用于蚀刻的附加补偿部分，或离子注入工艺以降低未蚀刻绝缘部分的蚀刻速率。 因此，可以减少流体注入装置的隔离部分中的串扰或过冲，并且能够精确地制造流体注射装置。