Solid state emitting device and method of producing the same
    1.
    发明授权
    Solid state emitting device and method of producing the same 失效
    固态发射装置及其制造方法

    公开(公告)号:US3821773A

    公开(公告)日:1974-06-28

    申请号:US22006472

    申请日:1972-01-24

    Applicant: BETA IND INC

    Inventor: MIZE J

    CPC classification number: H01S5/04 H01J1/308

    Abstract: CHARGE CARRIERS ARE EMITTED FROM THE SURFACE OF A HETEROJUNCTION REGION WHICH IS FORMED WITHIN THE FILM-LIKE BODY OF A SEMICONDUCTOR MATERIAL. THE EMITTING REGION IS DEFINED BY AN INTERFACE WHICH IS GENERALLY SEMICIRCULAR IN CROSS-SECTION OR HAS AT LEAST A SUBSTANTIAL PORTION NEITHER PARA LLEL NOR PERPENDICULAR TO THE SURFACE OF THE FILM-LIKE BODY. THE THICKNESS OF THE FILM-LIKE BODY IS SOMEWHAT GREATER THAN THE DEPTH OF THE EMITTING REGION SO THAT CONTINUOUS UNINTERRUPTED AND GENERALLY SEMI-CYLINDRICAL INNER AND OUTER DEPLETION REGIONS EXIST ADJACENT THE INTERFACE. WHEN A VOLTAGE IN APPLIED ACROSS THE FILM-LIKE BODY AND HENCE ACROSS THE EMITTING REGION, THE DEPLETION REGIONS DISTORT IN A PARTICULAR FASHION AND PRODUCE AN ELECTRIC FIELD WITHIN THE EMITTING REGION. ELECTRONS CROSSING THE INTERFACE ARE "HEATED BY THIS FIELD TO A DEGREE PREMITTING ELECTRON EMISSION FROM THE SURFACE OF THE EMITTING REGION. THE ELECTRON EMISSION MAY BE VARIED BY ALTERING THE VOLTAGE APPLIED ACROSS THE JUNCTION.

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