Abstract:
A method for depositing a substance on a substrate that involves forming a supercritical fluid solution of at least one supercritical fluid solvent and at least one solute, discharging the supercritical fluid solution through an orifice under conditions sufficient to form solid particles of the solute that are substantially free of the supercritical fluid solvent, and electrostatically depositing the solid solute particles onto the substrate. The solid solute particles may be charged to a first electric potential and then deposited onto the substrate to form a film. The solute particles may have a mean particle size of less than 1 micron.
Abstract:
A method for depositing a substance on a substrate that involves forming a supercritical fluid solution of at least one supercritical fluid solvent and at least one solute, discharging the supercritical fluid solution through an orifice under conditions sufficient to form solid particles of the solute that are substantially free of the supercritical fluid solvent, and electrostatically depositing the solid solute particles onto the substrate. The solid solute particles may be charged to a first electric potential and then deposited onto the substrate to form a film. The solute particles may have a mean particle size of less than 1 micron.
Abstract:
A method for forming a continuous film on a substrate surface that involves depositing particles onto a substrate surface and contacting the particle-deposited substrate surface with a supercritical fluid under conditions sufficient for forming a continuous film from the deposited particles. The particles may have a mean particle size of less 1 micron. The method may be performed by providing a pressure vessel that can contain a compressible fluid. A particle-deposited substrate is provided in the pressure vessel and the compressible fluid is maintained at a supercritical or sub-critical state sufficient for forming a film from the deposited particles. The Tg of particles may be reduced by subjecting the particles to the methods detailed in the present disclosure.