公开(公告)号：US20220229361A1

公开(公告)日：2022-07-21

申请号：US17611105

申请日：2020-05-13

Applicant: Board of Regents, The University of Texas System

Inventor： Sidlgata V. Sreenivasan ,  Parth Pandya ,  Shrawan Singhal ,  Paras Ajay ,  Ziam Ghaznavi ,  Ovadia Abed ,  Michael Watts

IPC: G03F7/00

Abstract: A method and system for configuring ultraviolet (UV)-based nanoimprint lithography (NIL) for roll-to-roll (R2R) processing, which combines the benefits of inexpensive R2R processing with the precise nanoscale patterning afforded by NIL. Furthermore, an R2R fabrication process is used to create nanoscale copper (Cu) metal mesh electrodes on flexible polycarbonate substrates and rigid quartz substrates employing jet-and-flash nanoimprint lithography (J-FIL), linear ion source etching (LIS) and selective electroless Cu metallization (ECu) using a palladium (Pd) seed layer.

公开(公告)号：US12168244B2

公开(公告)日：2024-12-17

申请号：US17801481

申请日：2021-02-25

Applicant: Board of Regents, The University of Texas System

Inventor： Sidlgata V. Sreenivasan ,  Parth Pandya ,  David Choi ,  Shrawan Singhal ,  Lawrence Dunn

IPC: B05D3/14 ,  B05D3/06 ,  B29D11/00 ,  B32B37/00 ,  B41J2/01 ,  B82Y35/00 ,  G01B13/22

Abstract: A method and system for nanoscale precision programmable profiling on substrates. Profiling material is dispensed on a substrate or a superstrate. The superstrate is brought in contact with the substrate. The profiling material is then cured after bringing the superstrate in contact with the substrate. The superstrate is separated from the substrate after curing. An optical metrology of points on the substrate corresponding to the final substrate profile is then performed.

公开(公告)号：US20230314672A1

公开(公告)日：2023-10-05

申请号：US18008358

申请日：2021-06-07

Applicant: Board of Regents, The University of Texas System

Inventor： Sidlgata V. Sreenivasan ,  David Choi ,  Parth Pandya ,  Shrawan Singhal

IPC: G02B5/18 ,  B82Y35/00 ,  B82Y40/00

CPC classification number: G02B5/1857 ,  B82Y35/00 ,  B82Y40/00 ,  G06F3/011

Abstract: A method for introducing a customized variation of a geometric parameter in a nanoscale pattern on a substrate. A nanoscale precision programmable profiling process is conducted on one or more regions of the substrate with the nanoscale pattern, where the nanoscale precision programmable profiling process is used to deposit a profiling film with a thickness profile that is a function of the customized variation of the geometric parameter in the nanoscale pattern. The method further comprises conducting a plasma etch process of the profiling film and the material of the nanoscale pattern that converts the thickness profile of the profiling film into the customized variation of the geometric parameter in the nanoscale pattern, where the customized variation is a function of the thickness profile of the profiling film.

公开(公告)号：US20230088746A1

公开(公告)日：2023-03-23

申请号：US17801481

申请日：2021-02-25

Applicant: Board of Regents, The University of Texas System

Inventor： Sidlgata V. Sreenivasan ,  Parth Pandya ,  David Choi ,  Shrawan Singhal ,  Lawrence Dunn

IPC: B05D3/14 ,  B05D3/06

Abstract: A method and system for nanoscale precision programmable profiling on substrates. Profiling material is dispensed on a substrate or a superstrate. The superstrate is brought in contact with the substrate. The profiling material is then cured after bringing the superstrate in contact with the substrate. The superstrate is separated from the substrate after curing. An optical metrology of points on the substrate corresponding to the final substrate profile is then performed.