NANOSTRUCTURED SILICIDE COMPOSITES FOR THERMOELECTRIC APPLICATIONS
    1.
    发明申请
    NANOSTRUCTURED SILICIDE COMPOSITES FOR THERMOELECTRIC APPLICATIONS 有权
    用于热电应用的纳米结构的硅氧烷复合材料

    公开(公告)号:US20140097391A1

    公开(公告)日:2014-04-10

    申请号:US14050184

    申请日:2013-10-09

    CPC classification number: H01L35/22 C01B33/06 H01L35/26 H01L35/34

    Abstract: The present invention provides a method of preparing a nanocomposite thermoelectric material. The method includes heating a reaction mixture of a semiconductor material and a metal complex to a temperature greater than the decomposition temperature of the metal complex. The heating forms metallic inclusions having a size less than about 100 nm that are substantially evenly distributed throughout the semiconductor material forming the nanocomposite thermoelectric material. The present invention also provides a nanocomposite thermoelectric material prepared by this method.

    Abstract translation: 本发明提供一种制备纳米复合热电材料的方法。 该方法包括将半导体材料和金属络合物的反应混合物加热至大于金属络合物的分解温度的温度。 加热形成尺寸小于约100nm的金属夹杂物,其基本均匀地分布在形成纳米复合热电材料的整个半导体材料中。 本发明还提供了一种通过该方法制备的纳米复合热电材料。

    Nanostructured silicide composites for thermoelectric applications
    6.
    发明授权
    Nanostructured silicide composites for thermoelectric applications 有权
    用于热电应用的纳米结构化硅化物复合材料

    公开(公告)号:US09231180B2

    公开(公告)日:2016-01-05

    申请号:US14050184

    申请日:2013-10-09

    CPC classification number: H01L35/22 C01B33/06 H01L35/26 H01L35/34

    Abstract: The present invention provides a method of preparing a nanocomposite thermoelectric material. The method includes heating a reaction mixture of a semiconductor material and a metal complex to a temperature greater than the decomposition temperature of the metal complex. The heating forms metallic inclusions having a size less than about 100 nm that are substantially evenly distributed throughout the semiconductor material forming the nanocomposite thermoelectric material. The present invention also provides a nanocomposite thermoelectric material prepared by this method.

    Abstract translation: 本发明提供一种制备纳米复合热电材料的方法。 该方法包括将半导体材料和金属络合物的反应混合物加热至大于金属络合物的分解温度的温度。 加热形成尺寸小于约100nm的金属夹杂物,其基本均匀地分布在形成纳米复合热电材料的整个半导体材料中。 本发明还提供了一种通过该方法制备的纳米复合热电材料。

Patent Agency Ranking