BACK SIDE ILLUMINATED CMOS IMAGE SENSOR ARRAYS
    1.
    发明申请
    BACK SIDE ILLUMINATED CMOS IMAGE SENSOR ARRAYS 有权
    背面照明CMOS图像传感器阵列

    公开(公告)号:US20160329367A1

    公开(公告)日:2016-11-10

    申请号:US15134181

    申请日:2016-04-20

    Abstract: An image sensor including at least one pixel for collecting charge in its photodiode is provided. The image sensor comprises: a substrate having a first surface on a front side and a second surface on a back side, a photodetector formed in the silicon substrate and having a light-receiving surface on the second surface, and a first layer with positive charges disposed on the second surface, the first layer being configured to form an electron accumulation region at the light-receiving surface of the photodetector for suppressing a dark current at a back side interface of the image sensor. A method for fabricating an image sensor including a first layer with positive charges is also provided.

    Abstract translation: 提供了包括用于在其光电二极管中收集电荷的至少一个像素的图像传感器。 图像传感器包括:具有前侧的第一表面和背面的第二表面的基板,形成在硅基板中并且在第二表面上具有光接收表面的光电检测器,以及具有正电荷的第一层 设置在第二表面上,第一层被配置为在光电检测器的光接收表面处形成电子存储区域,用于抑制图像传感器的背面界面处的暗电流。 还提供了一种用于制造包括具有正电荷的第一层的图像传感器的方法。

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