公开(公告)号：US11459657B2

公开(公告)日：2022-10-04

申请号：US16791003

申请日：2020-02-14

Applicant: CKD CORPORATION

Inventor： Takeya Inagaki

IPC: C23C16/455 ,  H01L23/34 ,  B05D3/04 ,  C23C16/44

Abstract: A gas supply unit is configured such that when a first gas whose temperature has been controlled at a first temperature is supplied to a chamber through an upper device and then a second gas which starts a chemical reaction at a reaction start temperature lower than the first temperature is supplied to the chamber through the upper device, before cleaning gas is supplied to the chamber through the defined between a base plate and the upper device to cool the upper device down to the reaction start temperature or lower.

公开(公告)号：US20200283899A1

公开(公告)日：2020-09-10

申请号：US16791003

申请日：2020-02-14

Applicant: CKD CORPORATION

Inventor： Takeya Inagaki

IPC: C23C16/455 ,  C23C16/44

Abstract: A gas supply unit is configured such that when a first gas whose temperature has been controlled at a first temperature is supplied to a chamber through an upper device and then a second gas which starts a chemical reaction at a reaction start temperature lower than the first temperature is supplied to the chamber through the upper device, before cleaning gas is supplied to the chamber through the defined between a base plate and the upper device to cool the upper device down to the reaction start temperature or lower.