FIELD EFFECT TRANSISTOR WITH AN ATOMICALLY THIN CHANNEL

    公开(公告)号:US20200258783A1

    公开(公告)日:2020-08-13

    申请号:US16647265

    申请日:2018-09-11

    Abstract: Production of a transistor, the channel structure of which comprises at least one finned channel structure, the method comprising: forming, from a substrate (1), a molding block (3), forming, on the molding block, a thin layer (7) made from a given semiconductor or semi-metallic material, and consisting of one to ten atomic or molecular monolayers of two-dimensional crystal, withdrawing the molding block while retaining a portion (7a) of the thin layer extending against a lateral face of the molding block, said retained portion (7a) forming a fin that is capable of forming a channel structure of the transistor, producing a coating gate electrode against said fin.

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