-
公开(公告)号：US10403463B2
公开(公告)日：2019-09-03
申请号：US15853485
申请日：2017-12-22
Inventor： Mehmet Ozgur , Paul Sunal , Lance Oh , Michael Huff , Michael Pedersen
Abstract: The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto a electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.
-
2.发明授权公开(公告)号：US11075086B1
公开(公告)日：2021-07-27
申请号：US15894067
申请日：2018-02-12
Inventor： Mehmet Ozgur , Michael Pedersen , Michael A. Huff
IPC: H01L21/3065 , H01L21/768 , H01L21/033 , H01L29/20 , H01L29/16
Abstract: A method for the etching of deep, high-aspect ratio features into silicon carbide (SiC), gallium nitride (GaN) and similar materials using an Inductively-Coupled Plasma (ICP) etch process technology is described. This technology can also be used to etch features in silicon carbide and gallium nitride having near vertical sidewalls. The disclosed method has application in the fabrication of electronics, microelectronics, power electronics, Monolithic Microwave Integrated Circuits (MMICs), high-voltage electronics, high-temperature electronics, high-power electronics, Light-Emitting Diodes (LEDs), Micro-Electro-Mechanical Systems (MEMS), micro-mechanical devices, microelectronic devices and systems, nanotechnology devices and systems, Nano-Electro-Mechanical Systems (NEMS), photonic devices, and any devices and/or structures made from silicon carbide and/or gallium nitride. The disclosed method also has application in the fabrication of through-substrate vias and through-wafer vias, including those that are subsequently filled with electrically conductive materials.
-
3.发明申请公开(公告)号：US20180197711A1
公开(公告)日：2018-07-12
申请号：US15853485
申请日：2017-12-22
Inventor： Mehmet Ozgur , Paul Sunal , Lance Oh , Michael Huff , Michael Pedersen
CPC classification number: H01J1/304 , B82Y10/00 , B82Y40/00 , H01J9/025 , H01J2201/30469
Abstract: The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto a electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.
-
Patent Agency Ranking
公开(公告)号：US11927281B1
公开(公告)日：2024-03-12
申请号：US17858041
申请日：2022-07-05
Inventor： Michael A. Huff , Mehmet Ozgur
IPC: F16K99/00
CPC classification number: F16K99/0048 , F16K99/0015 , F16K2099/0073 , F16K2099/0078
Abstract: A three-way (3-way) Micro-Electro-Mechanical Systems (MEMS)-based micro-valve device and method of fabrication for the implementation of a three-way MEMS-based micro-valve that uses a multicity of piezoelectric actuators. The 3-way has a wide range of applications including medical, industrial control, aerospace, automotive, consumer electronics and products, as well as any application(s) requiring the use of three-way micro-valves for the control of fluids. The three-way microvalve device and method of fabrication can be tailored to the requirements of a wide range of applications and fluid types. The microvalve can be used to control fluids at high pressures and provides for low flow resistances when the microvalve is open and has low leakage when closed.
-
5.发明授权公开(公告)号：US11049725B1
公开(公告)日：2021-06-29
申请号：US14290317
申请日：2014-05-29
Inventor： Mehmet Ozgur , Michael Pedersen , Michael A. Huff
IPC: H01L21/311 , H01L21/3065 , H01L21/033 , H01L21/768 , H01L29/16 , H01L29/20
Abstract: A method for the etching of deep, high-aspect ratio features into silicon carbide (SiC), gallium nitride (GaN) and similar materials using an Inductively-Coupled Plasma (ICP) etch process technology is described. This technology can also be used to etch features in silicon carbide and gallium nitride having near vertical sidewalls. The disclosed method has application in the fabrication of electronics, microelectronics, power electronics, Monolithic Microwave Integrated Circuits (MMICs), high-voltage electronics, high-temperature electronics, high-power electronics, Light-Emitting Diodes (LEDs), Micro-Electro-Mechanical Systems (MEMS), micro-mechanical devices, microelectronic devices and systems, nanotechnology devices and systems, Nano-Electro-Mechanical Systems (NEMS), photonic devices, and any devices and/or structures made from silicon carbide and/or gallium nitride. The disclosed method also has application in the fabrication of through-substrate vias and through-wafer vias, including those that are subsequently filled with electrically conductive materials.
-
公开(公告)号：US10910185B2
公开(公告)日：2021-02-02
申请号：US16527533
申请日：2019-07-31
Inventor： Mehmet Ozgur , Paul Sunal , Lance Oh , Michael Huff , Michael Pedersen
Abstract: The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto an electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.
-
7.发明授权公开(公告)号：US11984321B1
公开(公告)日：2024-05-14
申请号：US17358140
申请日：2021-06-25
Inventor： Mehmet Ozgur , Michael Pedersen , Michael A. Huff
IPC: H01L21/3065 , H01L21/033 , H01L21/768 , H01L29/16 , H01L29/20
CPC classification number: H01L21/3065 , H01L21/0332 , H01L21/76898 , H01L29/1608 , H01L29/2003
Abstract: A method for the etching of deep, high-aspect ratio features into silicon carbide (SiC), gallium nitride (GaN) and similar materials using an Inductively-Coupled Plasma (ICP) etch process technology is described. This technology can also be used to etch features in silicon carbide and gallium nitride having near vertical sidewalls. The disclosed method has application in the fabrication of electronics, microelectronics, power electronics, Monolithic Microwave Integrated Circuits (MMICs), high-voltage electronics, high-temperature electronics, high-power electronics, Light-Emitting Diodes (LEDs), Micro-Electro-Mechanical Systems (MEMS), micro-mechanical devices, microelectronic devices and systems, nanotechnology devices and systems, Nano-Electro-Mechanical Systems (NEMS), photonic devices, and any devices and/or structures made from silicon carbide and/or gallium nitride. The disclosed method also has application in the fabrication of through-substrate vias and through-wafer vias, including those that are subsequently filled with electrically conductive materials.
-
8.发明授权公开(公告)号：US08983414B2
公开(公告)日：2015-03-17
申请号：US13914144
申请日：2013-06-10
Inventor： Mehmet Ozgur , Michael Pedersen , Michael A. Huff
IPC: H04B1/18 , H04B1/40 , H01L25/00 , H01L23/00 , H03H9/02 , H03H9/60 , H01L23/538 , H03H3/02 , H03H9/70
CPC classification number: H04B1/40 , H01L23/5389 , H01L24/24 , H01L25/50 , H01L2224/04105 , H01L2224/24137 , H01L2924/12036 , H01L2924/1305 , H01L2924/13063 , H01L2924/13064 , H01L2924/1461 , H03H3/02 , H03H9/02228 , H03H9/605 , H03H9/70 , H01L2924/00
Abstract: A communication system front-end architecture and a method of fabricating same are disclosed in which a diverse set of semiconductor technologies and device types (including CMOS, SiGe CMOS, InP HBTs (heterojunction bipolar transistors), InP HEMTs (high electron mobility transistors), GaN HEMTs, SiC devices, any number from a diverse set of MEMS sensors and actuators, and potentially photonics) is merged onto a single silicon, or other material substrate to thereby enable the development of smaller, lighter, and higher performance systems.
Abstract translation: 公开了一种通信系统前端架构及其制造方法，其中，各种半导体技术和器件类型（包括CMOS，SiGe CMOS，InP HBT（异质结双极晶体管），InP HEMT（高电子迁移率晶体管） GaN HEMTs，SiC器件，来自不同组合的MEMS传感器和致动器以及潜在的光子学的任何数量）被合并到单个硅或其它材料衬底上，从而能够开发更小，更轻和更高性能的系统。
-
-
-
-
-
-
-
Search Results
8
records
(took 0.013 seconds)
