公开(公告)号：US20180033677A1

公开(公告)日：2018-02-01

申请号：US15547200

申请日：2015-09-24

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Hua SONG ,  Jiao WANG ,  Huan YANG

IPC: H01L21/762

CPC classification number: H01L21/76202 ,  H01L21/762 ,  H01L21/76205 ,  H01L21/76224 ,  H01L21/76227 ,  H01L21/76264 ,  H01L21/76286 ,  H01L21/763 ,  H01L21/823481

Abstract: A method for preparing a trench isolation structure, which comprises the following steps of: providing a substrate; forming an oxide layer on the substrate; successively generating an oxidation barrier layer and an ethyl orthosilicate layer on the surface of the oxide layer; etching the oxidation barrier layer and the ethyl orthosilicate layer; corroding the substrate to form a trench by using the oxidation barrier layer and the ethyl orthosilicate layer as mask layers; removing the ethyl orthosilicate layer, and oxidizing a side wall of the trench by using the oxidation barrier layer as a barrier layer; filling the trench with a polysilicon and then etching back the polysilicon, and removing the polysilicon on the surface of the oxidation barrier layer; and removing the oxidation barrier layer and the oxide layer on the surface of the substrate.

公开(公告)号：US20240072178A1

公开(公告)日：2024-02-29

申请号：US18262083

申请日：2022-03-03

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Yan GU ,  Hua SONG ,  Nailong HE ,  Sen ZHANG

IPC: H01L29/872 ,  H01L29/40 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78

CPC classification number: H01L29/872 ,  H01L29/404 ,  H01L29/66143 ,  H01L29/66659 ,  H01L29/7394 ,  H01L29/7835

Abstract: A diode and a manufacturing method therefor, and a semiconductor device. The diode includes: a substrate; an insulating buried layer provided on the substrate; a semiconductor layer provided on the insulating buried layer; anode; and a cathode, comprising: a trench-type contact, a trench being filled with a contact material, the trench extending from a first surface of the semiconductor layer to a second surface of the semiconductor layer, the first surface being a surface distant from the insulating buried layer, and the second surface being a surface facing the insulating buried layer; a cathode doped region surrounding the trench-type contact around and at the bottom of the trench-type contact, and also disposed on the first surface around the trench-type contact; and a negative electrode located on the cathode doped region and electrically connected to the cathode doped region.