公开(公告)号：US20160372591A1

公开(公告)日：2016-12-22

申请号：US14902261

申请日：2014-08-15

Applicant: CSMC TECHNOLOGIES FABI CO., LTD.

Inventor： Feng Huang ,  GuIPENG Sun ,  Guangtao Han

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L29/7816 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/4238 ,  H01L29/66659 ,  H01L29/7835

Abstract: A lateral double diffused metal oxide semiconductor field-effect transistor, comprising: semiconductor substrates (400, 500), body regions (401, 501) positioned in the semiconductor substrates, drift regions (404, 504) positioned in the semiconductor substrates (400, 500), source regions (405, 505) and a body leading-out region (402) which are positioned in the body regions (401, 501) and spaced from the drift regions (404, 504), a field region (508) and drain regions (406, 506) which are positioned in the drift regions (404, 504), and gates (407, 507) positioned on the surfaces of the semiconductor substrates (400, 500) to partially cover the body regions (401, 501), the drift regions (404, 504) and the field region (508), wherein the field region (508) is of a finger-like structure and comprises a plurality of strip field regions which extend from the source regions (405, 505) to the drain regions (406, 506) and are isolated by the active regions; and the strip field regions provided with strip gate extending regions extending from the gates (407, 507). The lateral double diffused metal oxide semiconductor field-effect transistor, with the strip gates on the strip field regions to deplete the whole drift regions (404, 504), can realize relatively high off-state breakdown voltage; and the impurity concentration of the whole drift regions (404, 504) is improved in the presence of a plurality of active regions, so that the turn-on resistance is reduced.

Abstract translation: 一种横向双扩散金属氧化物半导体场效应晶体管，包括：半导体衬底（400,500），位于所述半导体衬底中的体区（401,501），位于所述半导体衬底中的漂移区（404,504） 500），位于体区（401,501）中并与漂移区（404,504）间隔开的源区（405,505）和体引出区（402），场区（508） 以及位于所述漂移区域（404,504）中的漏极区域（406,506）以及位于所述半导体衬底（400,500）的表面上以部分地覆盖所述体区域（401,504）的栅极（407,507） 501），漂移区域（404,504）和场区域（508），其中场区域（508）是手指状结构，并且包括从源区域（405,450）延伸的多个条带区域， 505）连接到漏极区（406,506）并被有源区隔离; 并且带状区域设置有从栅极（407,507）延伸的带状栅极延伸区域。 横向双扩散金属氧化物半导体场效应晶体管，在带场区域上的带栅极消耗整个漂移区（404,504），可以实现相对高的截止击穿电压; 并且在存在多个有源区的情况下整个漂移区（404,504）的杂质浓度得到改善，使得导通电阻降低。