公开(公告)号：US20240088283A1

公开(公告)日：2024-03-14

申请号：US18465902

申请日：2023-09-12

Applicant: California Institute of Technology

Inventor： Austin Minnich ,  Iretomiwa Esho ,  Bekari Gabritchidze ,  Kieran A. Cleary

IPC: H01L29/778 ,  H01L27/088 ,  H01L29/08 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L27/088 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/2003 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7783

Abstract: A high electron mobility transistor (HEMT) including a channel; a barrier confining mobile charge carriers in the channel; a drain contact to the channel; a source contact to the channel; and a gate contact coupled to the channel and modulating a current, comprising the mobile charge carriers flowing in response to a voltage VSD applied between the source contact and the drain contact, when an RF signal electric field and DC bias electric field are applied between the gate contact and the source contact. An offset between the conduction bands of the channel and barrier is increased to a level that suppresses real space transfer noise associated with a portion of the mobile charge carriers being thermionically emitted out of the channel into the barrier when the VSD is applied, wherein the RST noise is reduced by at least a factor of two as compared to a HEMT where the alloy composition of the barrier is lattice matched.