公开(公告)号：US10215447B2

公开(公告)日：2019-02-26

申请号：US15142802

申请日：2016-04-29

Applicant: California Institute of Technology

Inventor： Nathan H. Thomas ,  Austin Minnich

IPC: C23C14/34 ,  F24J2/48 ,  F24J2/46 ,  C23C14/06

Abstract: A solar thermal absorber including a spectrally selective filter comprising a stack of dielectric layers and one or more semiconductor absorber layers. The dielectric layers are transparent to infrared radiation and have a refractive index contrast, and the semiconductor absorber layers have a band gap, such that the semiconductor absorber layers absorb at least a portion of the solar spectrum and the stack reflects infrared radiation.

公开(公告)号：US20160320096A1

公开(公告)日：2016-11-03

申请号：US15142802

申请日：2016-04-29

Applicant: California Institute of Technology

Inventor： Nathan H. Thomas ,  Austin Minnich

IPC: F24J2/48 ,  C23C14/34

CPC classification number: C23C14/0694 ,  C23C14/34 ,  F24S70/20 ,  F24S70/30 ,  Y02E10/40

Abstract: A solar thermal absorber including a spectrally selective filter comprising a stack of dielectric layers and one or more semiconductor absorber layers. The dielectric layers are transparent to infrared radiation and have a refractive index contrast, and the semiconductor absorber layers have a band gap, such that the semiconductor absorber layers absorb at least a portion of the solar spectrum and the stack reflects infrared radiation.

Abstract translation: 一种太阳能热吸收器，其包括光谱选择性滤光器，其包括一叠电介质层和一个或多个半导体吸收层。 电介质层对红外线辐射是透明的，并且具有折射率对比度，并且半导体吸收层具有带隙，使得半导体吸收层吸收太阳光谱的至少一部分并且反射红外辐射。

公开(公告)号：US20240345150A1

公开(公告)日：2024-10-17

申请号：US18632116

申请日：2024-04-10

Applicant: California Institute of Technology

Inventor： Jacob W. Kooi ,  Goutam Chattopadhyay ,  Austin Minnich

IPC: G01R29/26 ,  G01K7/00 ,  H01P3/00 ,  H03F7/00

CPC classification number: G01R29/26 ,  G01K7/00 ,  H01P3/003 ,  H03F7/00 ,  H03F2200/294

Abstract: A variable temperature load (VTL) or noise source including a grounded coplanar waveguide (GCPW) comprising a first metallization patterned on a fused quartz substrate, the first metallization comprising a first end for connecting to a coaxial connector and a second end for connecting to a coplanar waveguide (CPW); the CPW coupled to a 50 ohm termination and comprising a second metallization patterned on a top surface of a crystal quartz substrate; a temperature sensing diode thermally coupled to the crystal quartz substrate and the second metallization; and a heater resistor coupled to the crystal quartz substrate via contact metallization.

公开(公告)号：US20250120318A1

公开(公告)日：2025-04-10

申请号：US18908317

申请日：2024-10-07

Applicant: California Institute of Technology

Inventor： Harold Frank Greer ,  Jenni Solgaard ,  Ivy Chen ,  Austin Minnich ,  Alireza Marandi ,  Ryoto Sekine

IPC: H10N30/082 ,  H01L21/67

Abstract: Lithium niobate (LiNbO3, LN) is a ferroelectric crystal of interest for integrated photonics owing to its large second-order optical nonlinearity and the ability to impart periodic poling via an external electric field. However, on-chip device performance based on thin-film lithium niobate (TFLN) is presently limited by propagation losses arising from surface roughness on the nano- and microscale. Atomic layer etching (ALE) can smooth these features and thereby increase photonic performance. In one embodiment disclosed herein, an isotropic ALE process for x-cut MgO-doped LN uses sequential exposures of H2 and SF6/Ar plasmas. We observed an etch rate of 1.59±0.02 nm/cycle with a synergy of 96.9%. ALE can be achieved with SF6/O2 or Cl2/BCl3 plasma exposures in place of the SF6/Ar plasma step with synergies of 99.5% and 91.5% respectively. The process decreased the sidewall surface roughness of TFLN waveguides etched by physical Ar+ milling by 30% without additional wet processing.

公开(公告)号：US20240088283A1

公开(公告)日：2024-03-14

申请号：US18465902

申请日：2023-09-12

Applicant: California Institute of Technology

Inventor： Austin Minnich ,  Iretomiwa Esho ,  Bekari Gabritchidze ,  Kieran A. Cleary

IPC: H01L29/778 ,  H01L27/088 ,  H01L29/08 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L27/088 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/2003 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7783

Abstract: A high electron mobility transistor (HEMT) including a channel; a barrier confining mobile charge carriers in the channel; a drain contact to the channel; a source contact to the channel; and a gate contact coupled to the channel and modulating a current, comprising the mobile charge carriers flowing in response to a voltage VSD applied between the source contact and the drain contact, when an RF signal electric field and DC bias electric field are applied between the gate contact and the source contact. An offset between the conduction bands of the channel and barrier is increased to a level that suppresses real space transfer noise associated with a portion of the mobile charge carriers being thermionically emitted out of the channel into the barrier when the VSD is applied, wherein the RST noise is reduced by at least a factor of two as compared to a HEMT where the alloy composition of the barrier is lattice matched.