公开(公告)号：US09799785B1

公开(公告)日：2017-10-24

申请号：US14998990

申请日：2016-03-14

Applicant: California Institute of Technology

Inventor： David Z. Ting ,  Alexander Soibel ,  Arezou Khoshakhlagh ,  Sarath Gunapala

IPC: H01L31/02 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/109 ,  H01L31/0304

CPC classification number: H01L31/035236 ,  H01L31/03046 ,  H01L31/109 ,  H01L31/1844

Abstract: Dual-band barrier infrared detectors having structures configured to reduce spectral crosstalk between spectral bands and/or enhance quantum efficiency, and methods of their manufacture are provided. In particular, dual-band device structures are provided for constructing high-performance barrier infrared detectors having reduced crosstalk and/or enhance quantum efficiency using novel multi-segmented absorber regions. The novel absorber regions may comprise both p-type and n-type absorber sections. Utilizing such multi-segmented absorbers it is possible to construct any suitable barrier infrared detector having reduced crosstalk, including npBPN, nBPN, pBPN, npBN, npBP, pBN and nBP structures. The pBPN and pBN detector structures have high quantum efficiency and suppresses dark current, but has a smaller etch depth than conventional detectors and does not require a thick bottom contact layer.