公开(公告)号：US09064667B2

公开(公告)日：2015-06-23

申请号：US14081932

申请日：2013-11-15

Applicant: California Institute of Technology

Inventor： Harish Manohara ,  Valerie Kristof ,  Risaku Toda

IPC: H01J9/04 ,  H01J9/02 ,  B82Y40/00

CPC classification number: H01J9/025 ,  B82Y40/00 ,  H01J9/022 ,  Y10S977/939

Abstract: Systems and methods in accordance with embodiments of the invention implement carbon nanotube-based field emitters. In one embodiment, a method of fabricating a carbon nanotube field emitter includes: patterning a substrate with a catalyst, where the substrate has thereon disposed a diffusion barrier layer; growing a plurality of carbon nanotubes on at least a portion of the patterned catalyst; and heating the substrate to an extent where it begins to soften such that at least a portion of at least one carbon nanotube becomes enveloped by the softened substrate.

Abstract translation: 根据本发明的实施例的系统和方法实现了基于碳纳米管的场发射器。 在一个实施例中，制造碳纳米管场致发射体的方法包括：用催化剂图案化衬底，其中衬底上设置有扩散阻挡层; 在图案化催化剂的至少一部分上生长多个碳纳米管; 以及将基底加热到开始软化的程度，使得至少一部分至少一个碳纳米管被软化的基底包围。

公开(公告)号：US20140148074A1

公开(公告)日：2014-05-29

申请号：US14081932

申请日：2013-11-15

Applicant: California Institute of Technology

Inventor： Harish Manohara ,  Valerie Kristof ,  Risaku Toda

IPC: H01J9/02

CPC classification number: H01J9/025 ,  B82Y40/00 ,  H01J9/022 ,  Y10S977/939

Abstract: Systems and methods in accordance with embodiments of the invention implement carbon nanotube-based field emitters. In one embodiment, a method of fabricating a carbon nanotube field emitter includes: patterning a substrate with a catalyst, where the substrate has thereon disposed a diffusion barrier layer; growing a plurality of carbon nanotubes on at least a portion of the patterned catalyst; and heating the substrate to an extent where it begins to soften such that at least a portion of at least one carbon nanotube becomes enveloped by the softened substrate.

Abstract translation: 根据本发明的实施例的系统和方法实现了基于碳纳米管的场发射器。 在一个实施例中，制造碳纳米管场致发射体的方法包括：用催化剂图案化衬底，其中衬底上设置有扩散阻挡层; 在图案化催化剂的至少一部分上生长多个碳纳米管; 以及将基底加热到开始软化的程度，使得至少一部分至少一个碳纳米管被软化的基底包围。