公开(公告)号：US20120235837A1

公开(公告)日：2012-09-20

申请号：US13161231

申请日：2011-06-15

Applicant: Ching-Cheng TSAI ,  Cheng-Hui SHEN

Inventor： Ching-Cheng TSAI ,  Cheng-Hui SHEN

IPC: H03M11/00

CPC classification number: H01H9/18 ,  H01H13/83 ,  H01H2209/06 ,  H01H2209/082 ,  H01H2211/004 ,  H01H2219/044 ,  H01H2219/062

Abstract: A membrane circuit board and a keyboard device having the same are provided in the invention. The membrane circuit board is defined with a plurality of key regions. Each of the key regions is with a pressing region and at least one light-pervious region thereon. The membrane circuit board comprising at least two light-pervious membranes stacked with each other, and at least one light-pervious adhesive layer sandwiched between the two light-pervious membranes and at least fully filled in the light-pervious region.

Abstract translation: 在本发明中提供了一种膜电路板和具有该膜电路板的键盘装置。 膜电路板由多个键区限定。 每个关键区域具有按压区域和其上的至少一个透光区域。 所述膜电路板包括彼此层叠的至少两个透光膜，以及夹在所述两个透光膜之间并且至少完全填充在所述透光区域中的至少一个透光性粘合剂层。

公开(公告)号：US20110037000A1

公开(公告)日：2011-02-17

申请号：US12539558

申请日：2009-08-11

Applicant: Cheng-Hui SHEN ,  Don BERRIAN

Inventor： Cheng-Hui SHEN ,  Don BERRIAN

IPC: H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J2237/20214 ,  H01J2237/20228 ,  H01J2237/31701

Abstract: Initially, an ion beam is formed as an elongated shape incident on a wafer, where the shape has a length along a first axis longer than a diameter of the wafer, and a width along a second axis shorter than the diameter of the wafer. Then, a center of the wafer is moved along a scan path intersecting the ion beam at a movement velocity, and the wafer is rotated around at a rotation velocity simultaneously. During the simultaneous movement and rotation, the wafer is totally overlapped with the ion beam along the first axis when the wafer intersects with the ion beam, and the rotation velocity is at most a few times of the movement velocity. Both the movement velocity and the rotation velocity can be a constant or have a velocity profile relative to a position of the ion beam across the wafer.

Abstract translation: 最初，离子束形成为入射在晶片上的细长形状，其中形状具有长于晶片直径的第一轴的长度，以及沿着比晶片直径短的第二轴的宽度。 然后，晶片的中心以与移动速度相交的扫描路径移动，并且晶片以旋转速度同时旋转。 在同时移动和旋转期间，当晶片与离子束相交时，晶片与离子束完全重叠，并且旋转速度至多为移动速度的几倍。 移动速度和旋转速度都可以是恒定的，或者具有相对于跨越晶片的离子束的位置的速度分布。