RESISTIVE ELECTRODES ON FERROELECTRIC DEVICES FOR LINEAR PIEZOELECTRIC PROGRAMMING

    公开(公告)号:US20230054128A1

    公开(公告)日:2023-02-23

    申请号:US17821789

    申请日:2022-08-23

    Abstract: Disclosed are ferroelectric devices including devices for performing a multiplication of analog input signals and resonators. In one aspect, a ferroelectric nanoelectromechanical device includes a first structural beam, a first input electrode disposed on a first top portion of the first structural beam, and an output electrode. The apparatus further includes a first ferroelectric film disposed on a second top portion of the first input electrode, and a first resistive layer disposed on a third top portion of the first ferroelectric film, wherein a first electrode is positioned at a first end of the first resistive layer and a second electrode is positioned at a second end of the first resistive layer.

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